Submissions from 2005
Nanoscale Capacitance-Voltage Characterization of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures, G. Koley, L. Lakshmanan, N. Tipirneni, M. Gaevski, A. Koudymov, Grigory Simin, Ho-Young Cha, M. G. Spencer, and M. A. Khan
Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, and M. Asif Khan
Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs, Alexei Koudymov, V. Adivarahan, Jinwei Yang, Grigory Simin, and Asif Khan
Phase Noise and Fading Effects on System Performance in MT-DS-SS, Hongxiang Li and David W. Matolak
Progress in Producing Large Area Flexible Dye Sensitized Solar Cells, K. C. Mandal, M. Choi, C. Noblitt, and R. D. Rauh
Crystal Growth, Characterization and Anisotropic Electrical Properties of GaSe Single Crystals for THz Source and Radiation Detector Applications, K. C. Mandal, C. Noblitt, M. Choi, A. Smirnov, and R. D. Rauh
Asynchronous DS-SS CDMA Random Spreading Code Correlation Statistics in the Presence of Timing Error, David W. Matolak
Design and Simulation of a Permanent-Magnet Electromagnetic Aircraft Launcher, Dean Patterson, Antonello Monti, Charles W. Brice, Roger A. Dougal, Robert O. Pettus, Srinivas Dhulipala, Dilip Chandra Kovuri, and Tiziana Bertoncelli
Tb3+-doped K Pb2Br5: Low-energy phonon mid-infrared laser crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, and S. A. Payne
Performance Stability of High-power III-Nitride Metal-Oxide Semiconductor-Heterostructure Field-Effect Transistors, S. Saygi, H. Fatima, X. He, S. Rai, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, and M. Asif Khan
Real-Space Electron Transfer in III-Nitride Metal-Oxide-Semiconductor-Heterojunction Structures, S. Saygi, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan, J. Deng, R. Gaska, and M. S. Shur
Study and Design of a Capacitively Coupled Polymeric Internal Antenna, Khan M.Z. Shams and Mohammod Ali
Stable 20 W/mm AlGaN-GaN MOSHFET, Grigory Simin, V. Adivarahan, J. Yang, A. Koudymov, S. Rai, and M. Asif Khan
High-Power RF Switching using III-Nitride Metal-Oxide-Semiconductor Heterojunction Capacitors, Grigory Simin, A. Koudymov, Z.-J. Yang, V. Adivarahan, J. Yang, and M. Asif Khan
High-Power Operation of III-N MOSHFET RF Switches, Z. Yang, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, and M. Asif Khan
Terahertz Studies of the Dielectric Response and Second-Order Phonons in a GaSe Crystal, B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal
Submissions from 2004
Wide-Band/Dual-Band Packaged Antenna for 5-6 GHz WLAN Application, Mohammod Ali, Tuangsit Sittironnarit, Huan-Sheng Hwang, Robert A. Sadler, and Gerard James Hayes
Design and Analysis of an R-Shaped Dual-Band Planar Inverted-F Antenna for Vehicular Applications, Mohammod Ali, Guangli Yang, Huan-Sheng Hwang, and Tuangsit Sittironnarit
Simulation of Gate Lag and Current Collapse in Gallium Nitride Field-Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, M. S. Shur, M. Asif Khan, and Grigory Simin
Simulation of Hot Electron and Quantum Effects in AlGaN/GaN Heterostructure Field Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, H. Xu, M. S. Shur, M. Asif Khan, Grigory Simin, and J. Yang
Symbolically Aided Model Development for an induction Machine in Virtual Test Bed, Wenzhong Gao, Eugene V. Slovodnik, and Roger A. Dougal
Response to Comments on “Passivity-Based Control of Saturated Induction Motors”, Levent U. Gökdere, Marwan A. Simaan, and Charles W. Brice
Control Strategies for Active Power Sharing in a Fuel-Cell-Powered Battery-Charging Station, Zhenhua Jiang and Roger A. Dougal
Synergetic Control of Power Converters for Pulse Current Charging of Advanced Batteries From a Fuel Cell Power Source, Zhenhua Jiang and Roger A. Dougal
Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors, A. Koudymov, S. Rai, V. Adivarahan, M. Gaevski, J. Yang, Grigory Simin, and M. A. Khan
Dynamics of Melt–Crystal Interface and Thermal Stresses in Rotational Bridgman Crystal Growth Process, R. Ma, H. Zhang, D. J. Larson Jr., and K. C. Mandal
A New Multi-State Fading Model for Mobile Satellite Channels Based upon AFD and LCR Data, David W. Matolak
Spectral Overlay of Direct-Sequence Spread Spectrum in the Instrument Landing System Glideslope Band, David W. Matolak and Joshua T. Neville
Optical Properties of Nd3+- and Tb3+-Doped KPb2Br5 and RbPb2Br5 with Low Nonradiative Decay, K. Rademaker, W. F. Krupke, R. H. Page, S. A. Payne, K. Petermann, G. Huber, A. P. Yelisseyev, L. I. Isaenko, U. N. Roy, A. Burger, K. C. Mandal, and K. Nitsch
Slow Nonradiative Decay for Rare Earths in KPb2Br5 and RbPb2Br5, K. Rademaker, S. A. Payne, G. Huber, K. Petermann, W. F. Krupke, R. H. Page, A. P. Yelisseyev, L. I. Isaenko, U. N. Roy, A. Burger, K. C. Mandal, and K. Nitsch
Generation-Recombination Noise in GaN-Based Devices, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, R. Gaska, M. Asif Khan, and Grigory Simin
Power Controller Design for Maximum Power Tracking in Solar installations, Eugene V. Solodovnik, Shengyi Liu, and Roger A. Dougal
Submissions from 2003
Submicron Gate Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, Grigory Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, and R. Gaska
Design of a Multiband Internal Antenna for Third Generation Mobile Phone Handsets, Mohammod Ali, Gerard James Hayes, Huan-Sheng Hwang, and Robert A. Sadler
An Assessment of Wide Bandgap Semiconductors for Power Devices, J. L. Hudgins, Grigory Simin, Enrico Santi, and M. Asif Khan
AlGaN/GaN Heterostructure Field-Effect Transistors on Single-Crystal Bulk AlN, X. Hu, J. Deng, N. Pala, R. Gaska, M. S. Shur, C. Q. Chen, J. Yang, Grigory Simin, M. A. Khan, J. C. Rojo, and L. J. Schowalter
Design and Testing of Spacecraft Power Systems Using VTB, Zhenhua Jiang, Shengyi Liu, and Roger A. Dougal
Double-Scaled Potential Profile in a Group-III Nitride Alloy Revealed by Monte Carlo Simulation of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, and R. Gaska
Strain-Engineered Novel III-N Electronic Devices with High Quality Dielectric/Semiconductor Interfaces, M. Asif Khan, M. S. Shur, and Grigory Simin
Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, and A. Tarakji
Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, and A. Tarakji
Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jinaping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, and A. Tarakji
Dynamic Current-Voltage Characteristics of III-N HFETs, A. Koudymov, Grigory Simin, M. Asif Khan, A. Tarakji, and M. S. Shur
Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Zhang, X. Hu, and J. Yang
Low-Cost, Large-Area Nanocrystalline TiO2-Polymer Solar Cells on Flexible Plastics, K. C. Mandal, A. Smirnov, D. Peramunage, and R. D. Rauh
Thermally Evaporated AgGaTe2 Thin Films for Low-Cost p-AgGaTe2/n-Si Heterojunction Solar Cells, K. C. Mandal, A. Smirnov, U. N. Roy, and A. Burger
Rapid Prototyping of Digital Controls for Power Electronics, Antonello Monti, Enrico Santi, Roger A. Dougal, and Marco Riva
On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs, S. L. Rumyantsev, Y. Deng, S. Shur, M. E. Levinshtein, M. A. Khan, Grigory Simin, J. Yang, X. Hu, and R. Gaska
Synergetic Control for DC-DC Boost Converter: Implementation Options, Enrico Santi, Antonello Monti, Donghong Li, Karthik Proddutur, and Roger A. Dougal
Millimeter-Wave High-Power 0.25-µm Gate-Length AlGaN/GaN HEMTs on SiC Substrates, R. S. Schwindt, V. Kumar, A. Kuliev, Grigory Simin, J. W. Yang, M. A. Khan, M. E. Muir, and I. Adesida
Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm, M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, and R. Gaska
AlGaN/GaN HEMTs - Operation in the K-Band and Above, Ioulia P. Smorchkova, M. Wojtowicz, Rajinder Sandhu, R. Tsai, M. Barsky, C. Namba, P.-S. Liu, R. Dia, MinhDao Truong, D. Ko, J. Wang, H. Wange, and Asif Khan
Thermal Management of AlGaN-GaN HFETs on Sapphire Using Flip-Chip Bonding with Epoxy Underfill, Jie Sun, H. Fatima, Alexei Koudymov, A. Chitnis, X. Hu, H.-M Wang, J. Zhang, Grigory Simin, J. Yang, and Asif Khan
Large-Signal Linearity in III-N MOSDHFETs, A. Tarakji, H. Fatima, X. Hu, J.-P. Zhang, Grigory Simin, M. Asif Khan, M. S. Shur, and R. Gaska
Submissions from 2002
Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission, Changqing Chen, Jinwei Yang, Mee-Yi Ryu, Jianping Zhang, Edmundas Kuokstis, Grigory Simin, and M. Asif Khan
GaN Homoepitaxy on Freestanding (11̄00) Oriented GaN Substrates, C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, Grigory Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, and Bruce Chai
Low-Temperature Operation of AlFaN Single-Quantum-Well Light-Emitting Diodes with Deep Ultraviolet Emission at 285 nm, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, and M. Asif Khan
Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate, Ashay Chitnis, Vinod Adivarahan, Maxim Shatalov, Jianping Zhang, Michael Gaevski, Wu Shuai, Radhika Pachipulusu, Jason Sun, Kirll Simin, Grigory Simin, Jinwei Yang, and Muhammad Asif Khan
324 nm Light Emitting Diodes with Milliwatt Powers, Ashay Chitnis, Jian Ping Zhang, Vinod Adivarahan, Wu Shuai, Jie Sun, Maxim Shatalov, Jin Wei Yang, Grigory Simin, and Muhammad Asif Khan
Power and Life Extension of Battery-Ultracapcacitor Hybrids, Roger A. Dougal, Shengyi Liu, and Ralph E. White
Dynamic Lithium-Ion Battery Model for System Simulation, Lijun Gao, Shengyi Liu, and Roger A. Dougal
Nonresonant Detection of Terahertz Radiation in Field Effect Transistors, W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, Grigory Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel
Maximum Current in Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, and R. Gaska
Low-Loss High Power RF Switching using Multifinger AlGaN/GaN MOSHFETs, A. Koudymov, Xuhong Hu, K. Simin, Grigory Simin, M. Ali, J. Yang, and M. Asif Khan
Low-Loss High Power RF Switching Using Multifinger AlGaN/GaN MOSHFETs, Alexei Koudymov, Xuhong Hu, Kirill Simin, Grigory Simin, Mohammod Ali, Jinwei Yang, and M. Asif Khan
AlGaN/GaN HEMTs on SiC with fT of over 120 GHz, V. Kumar, W. Lu, R. Schwindt, A. Kuliev, Grigory Simin, J. Yang, M. Asif Khan, and I. Adesida
Polarization Effects in Photoluminescence of C- and M-Plane GaN/AlGaN Multiple Quantum Wells, E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, Grigory Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai
Two Mechanisms of Blueshift of Edge Emission in InGaN-Based Epilayers and Multiple Quantum Wells, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. S. Shur
Near-Band-Edge Photoluminescence of Wurtzite-Type AlN, E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur, C. Rojo, and L. Schowalter
Dynamic Multiphysics Model for Solar Array, Shengyi Liu and Roger A. Dougal
Transient Response of Highly Doped Thin Channel GaN Metal-Semiconductor and Metal-Oxide-Semiconductor Field Effect Transistors, N. Pala, S. L. Rumyantsev, M. S. Shur, X. Hu, A. Tarakji, R. Gaska, M. Asif Khan, Grigory Simin, and J. Yang
Low Frequency Noise in Gallium Nitride Field Effect Transistors, S. L. Rumyantsev, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, and J. W. Yang
Luminescence Mechanisms in Quaternary AlxInyGa1-x-yN Materials, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, and M. Asif Khan
Time-Resolved Photoluminescence of Quaternary AlInGaN-Based Multiple Quantum Wells, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, G. G. Sim, and P. W. Yu
Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm, Maxim Shatalov, Ashay Chitnis, Alexey Koudymov, Jianping Zhang, Vinod Adivarahan, Grigory Simin, and M. Asif Khan
Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates, Maxim Shatalov, Grigory Simin, Vinod Adivarahan, Ashay Chitnis, Shuai Wu, Radhika Pachipulusu, Vasavi Mandavilli, Kirill Simin, Jian Ping Zhang, Jin Wei Yang, and Muhammad Asif Khan
GaN/AlGaN P-Channel Inverted Heterostructure JFET, Maxim Shatalov, Grigory Simin, Jianping Zhang, Vinod Adivarahan, A. Koudymov, R. Pachipulusu, and M. Asif Khan
Deep Ultraviolet Light-Emitting Diodes using Quaternary AllnGaN Multiple Quantum Wells, M. Shatalov, J. Zhang, A. S. Chitnis, V. Adivarahan, J. Yang, Grigory Simin, and M. A. Khan
SiO2/AlGaN/InGaN/GaN MOSDHFETs, Grigory Simin, A. Koudymov, H. Fatima, Jianping Zhang, J. Yang, M. Asif Khan, X. Hu, A. Tarakji, R. Gaska, and M. S. Shur
DC and Microwave Performance of a GaN/AlGaN MOSHFET under High Temperature Stress, A. Tarakji, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. A. Khan, M. S. Shur, and R. Gaska
Milliwatt Power Deep Ultraviolet Light-Emitting Diodes Over Sapphire with Emission at 278 nm, J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, Grigory Simin, J. W. Yang, and M. Asif Khan
Crack-Free Thick AlGaN Grown on Sapphire using AlN/AlGaN Superlattices for Strain Management, J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, Grigory Simin, and M. Asif Khan
Submissions from 2001
Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. S. Shur
Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact to p GaN for High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, and R. Gaska
Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska
Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, and N. Pala
Passivity-Based Control of Saturated Induction Motors, Levent U. Gökdere, Marwan A. Simaan, and Charles W. Brice
Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, and R. Gaska
Drift Mobility of Electrons in AlGaN/GaN MOSHFET, P. A. Ivanov, M. E. Levinshtein, Grigory Simin, X. Hu, J. Yang, M. Asif Khan, S. L. Rumyantsev, M. S. Shur, and R. Gaska
Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells, Muhammad Asif Khan, Vinod Adivarahan, Jian Ping Zhang, Changqing Chen, Edmundas Kuokstis, Ashay Chitnis, Maxim Shatalov, Jin Wei Yang, and Grigory Simin
Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells, E. Kuokstis, Jianping Zhang, J.W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. S. Shur
Localization of Carriers and Polarization Effects in Quaternary AlInGaN Multiple Quantum Wells, E. Kuokstis, J. Zhang, M.-Y. Ryu, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. S. Shur
Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, and J. Yang
Thin n-GaN Films with Low Level of 1/f Noise, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. A. Khan, Grigory Simin, X. Hu, and J. Yang
Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Yang, X. Hu, A. Tarakji, and R. Gaska
Band-Edge Luminesce in Quaternary AlInGaN Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, and M. S. Shur
Stripe Geometry Light Emitting Diodes over Pulsed Lateral Epitaxial Overgrown GaN for Solid State White Lightning, M. Shatalov, A. Chitnis, D. Basak, J.W. Yang, Q. Fareed, Grigory Simin, M. Asif Khan, R. Gaska, and M. S. Shur
Strain Energy Band Engineering Approach to AlN/GaN/InN Heterojunction Devices, M. S. Shur, R. Gaska, J. W. Yang, Grigory Simin, and M. A. Khan
Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC with Oxide-Bridging, Grigory Simin, X. Hu, N. Ilinskaya, J. Zhang, A. Tarakji, A. Kumar, J. Yang, M. Asif Khan, R. Gaska, and M. S. Shur
AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor, Grigory Simin, Xuhong Hu, Ahmad Tarakji, Jianping Zhang, Alexey Koudymov, Salih Saygi, Jinwei Yang, M. Asif Khan, Michael S. Shur, and Remis Gaska