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Submissions from 2005

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Flexible Multiobjective Control of Power Converter in Active Hybrid Fuel Cell/Battery Power Sources, Zhenhua Jiang, Lijun Gao, and Roger A. Dougal

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Field-Plate Engineering for HFETs, S. Karmalkar, M. S. Shur, Grigory Simin, and M. Asif Khan

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Nanoscale Capacitance-Voltage Characterization of Two-Dimensional Electron Gas in AlGaN/GaN Heterostructures, G. Koley, L. Lakshmanan, N. Tipirneni, M. Gaevski, A. Koudymov, Grigory Simin, Ho-Young Cha, M. G. Spencer, and M. A. Khan

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Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, and M. Asif Khan

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Mechanism of Current Collapse Removal in Field-Plated Nitride HFETs, Alexei Koudymov, V. Adivarahan, Jinwei Yang, Grigory Simin, and Asif Khan

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Phase Noise and Fading Effects on System Performance in MT-DS-SS, Hongxiang Li and David W. Matolak

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Progress in Producing Large Area Flexible Dye Sensitized Solar Cells, K. C. Mandal, M. Choi, C. Noblitt, and R. D. Rauh

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Crystal Growth, Characterization and Anisotropic Electrical Properties of GaSe Single Crystals for THz Source and Radiation Detector Applications, K. C. Mandal, C. Noblitt, M. Choi, A. Smirnov, and R. D. Rauh

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Asynchronous DS-SS CDMA Random Spreading Code Correlation Statistics in the Presence of Timing Error, David W. Matolak

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Design and Simulation of a Permanent-Magnet Electromagnetic Aircraft Launcher, Dean Patterson, Antonello Monti, Charles W. Brice, Roger A. Dougal, Robert O. Pettus, Srinivas Dhulipala, Dilip Chandra Kovuri, and Tiziana Bertoncelli

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Tb3+-doped K Pb2Br5: Low-energy phonon mid-infrared laser crystal, U. N. Roy, R. H. Hawrami, Y. Cui, S. Morgan, A. Burger, K. C. Mandal, C. C. Noblitt, S. A. Speakman, K. Rademaker, and S. A. Payne

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Performance Stability of High-power III-Nitride Metal-Oxide Semiconductor-Heterostructure Field-Effect Transistors, S. Saygi, H. Fatima, X. He, S. Rai, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, and M. Asif Khan

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Real-Space Electron Transfer in III-Nitride Metal-Oxide-Semiconductor-Heterojunction Structures, S. Saygi, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, M. Asif Khan, J. Deng, R. Gaska, and M. S. Shur

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Study and Design of a Capacitively Coupled Polymeric Internal Antenna, Khan M.Z. Shams and Mohammod Ali

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Stable 20 W/mm AlGaN-GaN MOSHFET, Grigory Simin, V. Adivarahan, J. Yang, A. Koudymov, S. Rai, and M. Asif Khan

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High-Power RF Switching using III-Nitride Metal-Oxide-Semiconductor Heterojunction Capacitors, Grigory Simin, A. Koudymov, Z.-J. Yang, V. Adivarahan, J. Yang, and M. Asif Khan

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High-Power Operation of III-N MOSHFET RF Switches, Z. Yang, A. Koudymov, V. Adivarahan, J. Yang, Grigory Simin, and M. Asif Khan

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Terahertz Studies of the Dielectric Response and Second-Order Phonons in a GaSe Crystal, B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal

Submissions from 2004

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Wide-Band/Dual-Band Packaged Antenna for 5-6 GHz WLAN Application, Mohammod Ali, Tuangsit Sittironnarit, Huan-Sheng Hwang, Robert A. Sadler, and Gerard James Hayes

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Design and Analysis of an R-Shaped Dual-Band Planar Inverted-F Antenna for Vehicular Applications, Mohammod Ali, Guangli Yang, Huan-Sheng Hwang, and Tuangsit Sittironnarit

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Simulation of Gate Lag and Current Collapse in Gallium Nitride Field-Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, M. S. Shur, M. Asif Khan, and Grigory Simin

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Simulation of Hot Electron and Quantum Effects in AlGaN/GaN Heterostructure Field Effect Transistors, N. Braga, R. Mickevicius, R. Gaska, H. Xu, M. S. Shur, M. Asif Khan, Grigory Simin, and J. Yang

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Symbolically Aided Model Development for an induction Machine in Virtual Test Bed, Wenzhong Gao, Eugene V. Slovodnik, and Roger A. Dougal

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Response to Comments on “Passivity-Based Control of Saturated Induction Motors”, Levent U. Gökdere, Marwan A. Simaan, and Charles W. Brice

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Control Strategies for Active Power Sharing in a Fuel-Cell-Powered Battery-Charging Station, Zhenhua Jiang and Roger A. Dougal

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Synergetic Control of Power Converters for Pulse Current Charging of Advanced Batteries From a Fuel Cell Power Source, Zhenhua Jiang and Roger A. Dougal

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Monolithically Integrated High-Power Broad-Band RF Switch Based on III-N Insulated Gate Transistors, A. Koudymov, S. Rai, V. Adivarahan, M. Gaevski, J. Yang, Grigory Simin, and M. A. Khan

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Dynamics of Melt–Crystal Interface and Thermal Stresses in Rotational Bridgman Crystal Growth Process, R. Ma, H. Zhang, D. J. Larson Jr., and K. C. Mandal

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A New Multi-State Fading Model for Mobile Satellite Channels Based upon AFD and LCR Data, David W. Matolak

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Spectral Overlay of Direct-Sequence Spread Spectrum in the Instrument Landing System Glideslope Band, David W. Matolak and Joshua T. Neville

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Optical Properties of Nd3+- and Tb3+-Doped KPb2Br5 and RbPb2Br5 with Low Nonradiative Decay, K. Rademaker, W. F. Krupke, R. H. Page, S. A. Payne, K. Petermann, G. Huber, A. P. Yelisseyev, L. I. Isaenko, U. N. Roy, A. Burger, K. C. Mandal, and K. Nitsch

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Slow Nonradiative Decay for Rare Earths in KPb2Br5 and RbPb2Br5, K. Rademaker, S. A. Payne, G. Huber, K. Petermann, W. F. Krupke, R. H. Page, A. P. Yelisseyev, L. I. Isaenko, U. N. Roy, A. Burger, K. C. Mandal, and K. Nitsch

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Generation-Recombination Noise in GaN-Based Devices, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, R. Gaska, M. Asif Khan, and Grigory Simin

Power Controller Design for Maximum Power Tracking in Solar installations, Eugene V. Solodovnik, Shengyi Liu, and Roger A. Dougal

Submissions from 2003

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Submicron Gate Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, V. Adivarahan, M. Gaevski, W. H. Sun, H. Fatima, A. Koudymov, S. Saygi, Grigory Simin, J. Yang, M. A. Khan, A. Tarakji, M. S. Shur, and R. Gaska

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Design of a Multiband Internal Antenna for Third Generation Mobile Phone Handsets, Mohammod Ali, Gerard James Hayes, Huan-Sheng Hwang, and Robert A. Sadler

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An Assessment of Wide Bandgap Semiconductors for Power Devices, J. L. Hudgins, Grigory Simin, Enrico Santi, and M. Asif Khan

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AlGaN/GaN Heterostructure Field-Effect Transistors on Single-Crystal Bulk AlN, X. Hu, J. Deng, N. Pala, R. Gaska, M. S. Shur, C. Q. Chen, J. Yang, Grigory Simin, M. A. Khan, J. C. Rojo, and L. J. Schowalter

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Design and Testing of Spacecraft Power Systems Using VTB, Zhenhua Jiang, Shengyi Liu, and Roger A. Dougal

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Double-Scaled Potential Profile in a Group-III Nitride Alloy Revealed by Monte Carlo Simulation of Exciton Hopping, K. Kazlauskas, G. Tamulaitis, A. Zukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, and R. Gaska

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Strain-Engineered Novel III-N Electronic Devices with High Quality Dielectric/Semiconductor Interfaces, M. Asif Khan, M. S. Shur, and Grigory Simin

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Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, and A. Tarakji

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Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jianping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, and A. Tarakji

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Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications, M. Asif Khan, Grigory Simin, J. Yang, Jinaping Zhang, A. Koudymov, M. S. Shur, R. Gaska, Xuhong Hu, and A. Tarakji

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Dynamic Current-Voltage Characteristics of III-N HFETs, A. Koudymov, Grigory Simin, M. Asif Khan, A. Tarakji, and M. S. Shur

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Mobility Enhancement in AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Zhang, X. Hu, and J. Yang

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Low-Cost, Large-Area Nanocrystalline TiO2-Polymer Solar Cells on Flexible Plastics, K. C. Mandal, A. Smirnov, D. Peramunage, and R. D. Rauh

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Thermally Evaporated AgGaTe2 Thin Films for Low-Cost p-AgGaTe2/n-Si Heterojunction Solar Cells, K. C. Mandal, A. Smirnov, U. N. Roy, and A. Burger

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Rapid Prototyping of Digital Controls for Power Electronics, Antonello Monti, Enrico Santi, Roger A. Dougal, and Marco Riva

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On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs, S. L. Rumyantsev, Y. Deng, S. Shur, M. E. Levinshtein, M. A. Khan, Grigory Simin, J. Yang, X. Hu, and R. Gaska

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Synergetic Control for DC-DC Boost Converter: Implementation Options, Enrico Santi, Antonello Monti, Donghong Li, Karthik Proddutur, and Roger A. Dougal

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Millimeter-Wave High-Power 0.25-µm Gate-Length AlGaN/GaN HEMTs on SiC Substrates, R. S. Schwindt, V. Kumar, A. Kuliev, Grigory Simin, J. W. Yang, M. A. Khan, M. E. Muir, and I. Adesida

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Time-Resolved Electroluminescence of AlGaN-Based Light-Emitting Diodes with Emission at 285 nm, M. Shatalov, A. Chitnis, V. Mandavilli, R. Pachipulusu, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, M. Asif Khan, G. Tamulaitis, A. Sereika, I. Yilmaz, M. S. Shur, and R. Gaska

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AlGaN/GaN HEMTs - Operation in the K-Band and Above, Ioulia P. Smorchkova, M. Wojtowicz, Rajinder Sandhu, R. Tsai, M. Barsky, C. Namba, P.-S. Liu, R. Dia, MinhDao Truong, D. Ko, J. Wang, H. Wange, and Asif Khan

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Thermal Management of AlGaN-GaN HFETs on Sapphire Using Flip-Chip Bonding with Epoxy Underfill, Jie Sun, H. Fatima, Alexei Koudymov, A. Chitnis, X. Hu, H.-M Wang, J. Zhang, Grigory Simin, J. Yang, and Asif Khan

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Large-Signal Linearity in III-N MOSDHFETs, A. Tarakji, H. Fatima, X. Hu, J.-P. Zhang, Grigory Simin, M. Asif Khan, M. S. Shur, and R. Gaska

Submissions from 2002

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Pulsed Metalorganic Chemical Vapor Deposition of Quaternary AlInGaN Layers and Multiple Quantum Wells for Ultraviolet Light Emission, Changqing Chen, Jinwei Yang, Mee-Yi Ryu, Jianping Zhang, Edmundas Kuokstis, Grigory Simin, and M. Asif Khan

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GaN Homoepitaxy on Freestanding (11̄00) Oriented GaN Substrates, C. Q. Chen, M. E. Gaevski, W. H. Sun, E. Kuokstis, J. P. Zhang, R. S. Q. Fareed, H. M. Wang, J. W. Yang, Grigory Simin, M. A. Khan, Herbert-Paul Maruska, David W. Hill, Mitch M. C. Chou, and Bruce Chai

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Low-Temperature Operation of AlFaN Single-Quantum-Well Light-Emitting Diodes with Deep Ultraviolet Emission at 285 nm, A. Chitnis, R. Pachipulusu, V. Mandavilli, M. Shatalov, E. Kuokstis, J. P. Zhang, V. Adivarahan, S. Wu, Grigory Simin, and M. Asif Khan

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Submilliwatt Operation of AlInGaN Based Multifinger-Design 315 nm Light Emitting Diode (LED) over Sapphire Substrate, Ashay Chitnis, Vinod Adivarahan, Maxim Shatalov, Jianping Zhang, Michael Gaevski, Wu Shuai, Radhika Pachipulusu, Jason Sun, Kirll Simin, Grigory Simin, Jinwei Yang, and Muhammad Asif Khan

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324 nm Light Emitting Diodes with Milliwatt Powers, Ashay Chitnis, Jian Ping Zhang, Vinod Adivarahan, Wu Shuai, Jie Sun, Maxim Shatalov, Jin Wei Yang, Grigory Simin, and Muhammad Asif Khan

Power and Life Extension of Battery-Ultracapcacitor Hybrids, Roger A. Dougal, Shengyi Liu, and Ralph E. White

Dynamic Lithium-Ion Battery Model for System Simulation, Lijun Gao, Shengyi Liu, and Roger A. Dougal

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Nonresonant Detection of Terahertz Radiation in Field Effect Transistors, W. Knap, V. Kachorovskii, Y. Deng, S. Rumyantsev, J.-Q. Lü, R. Gaska, M. S. Shur, Grigory Simin, X. Hu, M. Asif Khan, C. A. Saylor, and L. C. Brunel

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Maximum Current in Nitride-Based Heterostructure Field-Effect Transistors, A. Koudymov, H. Fatima, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, and R. Gaska

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Low-Loss High Power RF Switching using Multifinger AlGaN/GaN MOSHFETs, A. Koudymov, Xuhong Hu, K. Simin, Grigory Simin, M. Ali, J. Yang, and M. Asif Khan

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Low-Loss High Power RF Switching Using Multifinger AlGaN/GaN MOSHFETs, Alexei Koudymov, Xuhong Hu, Kirill Simin, Grigory Simin, Mohammod Ali, Jinwei Yang, and M. Asif Khan

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AlGaN/GaN HEMTs on SiC with fT of over 120 GHz, V. Kumar, W. Lu, R. Schwindt, A. Kuliev, Grigory Simin, J. Yang, M. Asif Khan, and I. Adesida

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Polarization Effects in Photoluminescence of C- and M-Plane GaN/AlGaN Multiple Quantum Wells, E. Kuokstis, C. Q. Chen, M. E. Gaevski, W. H. Sun, J. W. Yang, Grigory Simin, M. Asif Khan, H. P. Maruska, D. W. Hill, M. C. Chou, J. J. Gallagher, and B. Chai

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Two Mechanisms of Blueshift of Edge Emission in InGaN-Based Epilayers and Multiple Quantum Wells, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. S. Shur

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Near-Band-Edge Photoluminescence of Wurtzite-Type AlN, E. Kuokstis, J. Zhang, Q. Fareed, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, M. Shur, C. Rojo, and L. Schowalter

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Dynamic Multiphysics Model for Solar Array, Shengyi Liu and Roger A. Dougal

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Transient Response of Highly Doped Thin Channel GaN Metal-Semiconductor and Metal-Oxide-Semiconductor Field Effect Transistors, N. Pala, S. L. Rumyantsev, M. S. Shur, X. Hu, A. Tarakji, R. Gaska, M. Asif Khan, Grigory Simin, and J. Yang

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Low Frequency Noise in Gallium Nitride Field Effect Transistors, S. L. Rumyantsev, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, and J. W. Yang

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Luminescence Mechanisms in Quaternary AlxInyGa1-x-yN Materials, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, and M. Asif Khan

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Time-Resolved Photoluminescence of Quaternary AlInGaN-Based Multiple Quantum Wells, Mee-Yi Ryu, C. Q. Chen, E. Kuokstis, J. W. Yang, Grigory Simin, M. Asif Khan, G. G. Sim, and P. W. Yu

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Differential Carrier Lifetime in AlGaN Based Multiple Quantum Well Deep UV Light Emitting Diodes at 325 nm, Maxim Shatalov, Ashay Chitnis, Alexey Koudymov, Jianping Zhang, Vinod Adivarahan, Grigory Simin, and M. Asif Khan

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Lateral Current Crowding in Deep UV Light Emitting Diodes over Sapphire Substrates, Maxim Shatalov, Grigory Simin, Vinod Adivarahan, Ashay Chitnis, Shuai Wu, Radhika Pachipulusu, Vasavi Mandavilli, Kirill Simin, Jian Ping Zhang, Jin Wei Yang, and Muhammad Asif Khan

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GaN/AlGaN P-Channel Inverted Heterostructure JFET, Maxim Shatalov, Grigory Simin, Jianping Zhang, Vinod Adivarahan, A. Koudymov, R. Pachipulusu, and M. Asif Khan

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Deep Ultraviolet Light-Emitting Diodes using Quaternary AllnGaN Multiple Quantum Wells, M. Shatalov, J. Zhang, A. S. Chitnis, V. Adivarahan, J. Yang, Grigory Simin, and M. A. Khan

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SiO2/AlGaN/InGaN/GaN MOSDHFETs, Grigory Simin, A. Koudymov, H. Fatima, Jianping Zhang, J. Yang, M. Asif Khan, X. Hu, A. Tarakji, R. Gaska, and M. S. Shur

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DC and Microwave Performance of a GaN/AlGaN MOSHFET under High Temperature Stress, A. Tarakji, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. A. Khan, M. S. Shur, and R. Gaska

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Milliwatt Power Deep Ultraviolet Light-Emitting Diodes Over Sapphire with Emission at 278 nm, J. P. Zhang, A. Chitnis, V. Adivarahan, S. Wu, V. Mandavilli, R. Pachipulusu, M. Shatalov, Grigory Simin, J. W. Yang, and M. Asif Khan

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Crack-Free Thick AlGaN Grown on Sapphire using AlN/AlGaN Superlattices for Strain Management, J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, Grigory Simin, and M. Asif Khan

Submissions from 2001

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Ultraviolet Light-Emitting Diodes at 340 nm using Quaternary AlInGaN Multiple Quantum Wells, V. Adivarahan, A. Chitnis, J. P. Zhang, M. Shatalov, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. S. Shur

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Very-Low-Specific-Resistance Pd/Ag/Au/Ti/Au Alloyed Ohmic Contact to p GaN for High-Current Devices, V. Adivarahan, A. Lunev, M. Asif Khan, J. Yang, Grigory Simin, M. S. Shur, and R. Gaska

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Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors, V. Adivarahan, Grigory Simin, G. Tamulaitis, R. Srinivasan, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska

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Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors, R. Gaska, M. S. Shur, X. Hu, J. W. Yang, A. Tarakji, Grigory Simin, A. Khan, J. Deng, T. Werner, S. Rumyantsev, and N. Pala

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Passivity-Based Control of Saturated Induction Motors, Levent U. Gökdere, Marwan A. Simaan, and Charles W. Brice

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Si3N4/AlGaN/GaN-Metal-Insulator-Semiconductor Heterostructure Field-Effect Transistors, X. Hu, A. Koudymov, Grigory Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, and R. Gaska

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Drift Mobility of Electrons in AlGaN/GaN MOSHFET, P. A. Ivanov, M. E. Levinshtein, Grigory Simin, X. Hu, J. Yang, M. Asif Khan, S. L. Rumyantsev, M. S. Shur, and R. Gaska

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Stripe Geometry Ultraviolet Light Emitting Diodes at 305 Nanometers Using Quaternary AlInGaN Multiple Quantum Wells, Muhammad Asif Khan, Vinod Adivarahan, Jian Ping Zhang, Changqing Chen, Edmundas Kuokstis, Ashay Chitnis, Maxim Shatalov, Jin Wei Yang, and Grigory Simin

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Polarization Effects and UV Emission in Highly Excited Quaternary AlInGaN Quantum Wells, E. Kuokstis, Jianping Zhang, J.W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. S. Shur

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Localization of Carriers and Polarization Effects in Quaternary AlInGaN Multiple Quantum Wells, E. Kuokstis, J. Zhang, M.-Y. Ryu, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. S. Shur

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Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, and J. Yang

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Thin n-GaN Films with Low Level of 1/f Noise, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. A. Khan, Grigory Simin, X. Hu, and J. Yang

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Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, M. E. Levinshtein, P. A. Ivanov, M. Asif Khan, Grigory Simin, J. Yang, X. Hu, A. Tarakji, and R. Gaska

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Band-Edge Luminesce in Quaternary AlInGaN Light-Emitting Diodes, M. Shatalov, A. Chitnis, V. Adivarahan, A. Lunev, J. Zhang, J. W. Yang, Q. Fareed, Grigory Simin, A. Zakheim, M. Asif Khan, R. Gaska, and M. S. Shur

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Stripe Geometry Light Emitting Diodes over Pulsed Lateral Epitaxial Overgrown GaN for Solid State White Lightning, M. Shatalov, A. Chitnis, D. Basak, J.W. Yang, Q. Fareed, Grigory Simin, M. Asif Khan, R. Gaska, and M. S. Shur

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Strain Energy Band Engineering Approach to AlN/GaN/InN Heterojunction Devices, M. S. Shur, R. Gaska, J. W. Yang, Grigory Simin, and M. A. Khan