Stable CW Operation of Field-Plated GaN-AlGaN MOSHFETs at 19W/mm

Author(s)

V. AdivarahanFollow
J. Yang
A. Koudymov
Grigory Simin, University of South Carolina - ColumbiaFollow
M. A. Khan

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 26, Issue 8, 2005, pages 535-537.

©IEEE Electron Device Letters 2005, Institute of Electrical and Electronics Engineers (IEEE).

Adivarahan, V., Yang, J., Koudymov, A., Simin, G., & Khan, M. A. (August 2005). Stable CW Operation of Field-Plated GaN-AlGaN MOSHFETs at 19 W/mm. IEEE Electron Device Letters, 26 (8), 535-537. http://dx.doi.org/10.1109/LED.2005.852740

Rights

©IEEE Electron Device Letters 2005, Institute of Electrical and Electronics Engineers (IEEE).

Adivarahan, V., Yang, J., Koudymov, A., Simin, G., & Khan, M. A. (August 2005). Stable CW Operation of Field-Plated GaN-AlGaN MOSHFETs at 19 W/mm. IEEE Electron Device Letters, 26 (8), 535-537. http://dx.doi.org/10.1109/LED.2005.852740