Large-Signal Linearity in III-N MOSDHFETs

Author(s)

A. Tarakji
H. Fatima
X. Hu
J.-P. Zhang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan
M. S. Shur
R. Gaska

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 24, Issue 6, 2003, pages 369-371.

©IEEE Electron Device Letters 2003, Institute of Electrical and Electronics Engineers (IEEE).

Tarakji, A., Fatima, H., Hu, X., Zhang, J.-P., Simin, G., Khan, M. A., Shur, M. S., & Gaska, R. (June 2003). Large-Signal Linearity in III-N MOSDHFETs. IEEE Electron Device Letters, 24 (6), 369-371. http://dx.doi.org/10.1109/LED.2003.813355

Rights

©IEEE Electron Device Letters 2003, Institute of Electrical and Electronics Engineers (IEEE).

Tarakji, A., Fatima, H., Hu, X., Zhang, J.-P., Simin, G., Khan, M. A., Shur, M. S., & Gaska, R. (June 2003). Large-Signal Linearity in III-N MOSDHFETs. IEEE Electron Device Letters, 24 (6), 369-371. http://dx.doi.org/10.1109/LED.2003.813355