The 1.6-kV AlGaN/GaN HFETs

Author(s)

N. Tipirneni
A. Koudymov
V. AdivarahanFollow
J. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 27, Issue 9, 2006, pages 716-718.

©IEEE Electron Device Letters 2006, Institute of Electrical and Electronics Engineers (IEEE).

Tipirneni, N., Koudymov, A., Adivarahan, V., Yang, J., Simin, G., & Khan, M. A. (September 2006). The 1.6-kV AlGaN/GaN HFETs. IEEE Electron Device Letters, 27 (9), 716-718. http://dx.doi.org/10.1109/LED.2006.881084

Rights

©IEEE Electron Device Letters 2006, Institute of Electrical and Electronics Engineers (IEEE).

Tipirneni, N., Koudymov, A., Adivarahan, V., Yang, J., Simin, G., & Khan, M. A. (September 2006). The 1.6-kV AlGaN/GaN HFETs. IEEE Electron Device Letters, 27 (9), 716-718. http://dx.doi.org/10.1109/LED.2006.881084