Performance Stability of High-power III-Nitride Metal-Oxide Semiconductor-Heterostructure Field-Effect Transistors

Author(s)

S. Saygi
H. Fatima
X. He
S. Rai
A. Koudymov
V. AdivarahanFollow
J. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan

Document Type

Article

Publication Info

Published in Physica Status Solidi (c), Volume 2, Issue 7, 2005, pages 2651-2654.

©Physica Status Solidi (c) 2005, Wiley-VCH Verlag.

Saygi, S., Fatima, H., He, X., Rai, S., Koudymov, A., Adivarahan, V., Yang, J., Simin, G., & Khan, M. A. (May 2005). Performance Stability of High-power III-Nitride Metal-Oxide Semiconductor-Heterostructure Field-Effect Transistors. Physica Status Solidi (c), 2 (7), 2651-2654. http://dx.doi.org/10.1002/pssc.200461520

Rights

©Physica Status Solidi (c) 2005, Wiley-VCH Verlag.

Saygi, S., Fatima, H., He, X., Rai, S., Koudymov, A., Adivarahan, V., Yang, J., Simin, G., & Khan, M. A. (May 2005). Performance Stability of High-power III-Nitride Metal-Oxide Semiconductor-Heterostructure Field-Effect Transistors. Physica Status Solidi (c), 2 (7), 2651-2654. http://dx.doi.org/10.1002/pssc.200461520