Low-Loss High Power RF Switching Using Multifinger AlGaN/GaN MOSHFETs

Author(s)

Alexei Koudymov, University of South Carolina - Columbia
Xuhong Hu, University of South Carolina - Columbia
Kirill Simin, University of South Carolina - Columbia
Grigory Simin, University of South Carolina - ColumbiaFollow
Mohammod Ali, University of South Carolina - ColumbiaFollow
Jinwei Yang, University of South Carolina - Columbia
M. Asif Khan, University of South Carolina - ColumbiaFollow

Document Type

Article

Abstract

We demonstrate a novel RF switch based on a multifinger AlGan/GaN MOSHFET. Record high saturation current and breakdown voltage, extremely low gate leakage current and low gate capacitance of the III-N MOSHFETs make them excellent active elements for RF switching. Using a single element test circuit with 1-mm wide multifinger MOSHFET we achieved 0.27 dB insertion loss and more than 40 dB isolation. These parameters can be further improved by impedance matching and by using submicron gate devices. The maximum switching power extrapolated from the results for 1a/mm 100 mum wide device exceeds 40 W for a 1-mm wide 2-a/mm MOSHFET.

Publication Info

Published in IEEE Electron Device Letters, Volume 23, 2002, pages 449-451.

Rights

http://ieeexplore.ieee.org/xpl/RecentIssue.jsp?punumber=55

© 2002 by IEEE