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Submissions from 2001

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Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC with Oxide-Bridging, Grigory Simin, X. Hu, N. Ilinskaya, J. Zhang, A. Tarakji, A. Kumar, J. Yang, M. Asif Khan, R. Gaska, and M. S. Shur

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AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor, Grigory Simin, Xuhong Hu, Ahmad Tarakji, Jianping Zhang, Alexey Koudymov, Salih Saygi, Jinwei Yang, M. Asif Khan, Michael S. Shur, and Remis Gaska

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Induced Strain Mechanism of Current Collapse in AlGaN/GaN Heterostructure Field-Effect Transistors, Grigory Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska

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High-Temperature Performance of AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect-Transistors, Grigory Simin, A. Tarakji, X. Hu, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska

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Mechanism of Radio-Frequency Current Collapse in GaN-AlGaN Field-Effect Transistors, A. Tarakji, Grigory Simin, N. Ilinskaya, X. Hu, A. Kumar, A. Koudymov, J. Yang, M. Asif Khan, M. S. Shur, and R. Gaska

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Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes, Jian Ping Zhang, Vinod Adivarahan, Hong Mei Wang, Qhalid Fareed, Edmundas Kuokstis, Ashay Chitnis, Maxim Shatalov, Jin Wei Yang, Grigory Simin, Muhammad Asif Khan, Michael Shur, and Remis Gaska

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Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers, J. Zhang, E. Kuokstis, Q. Fareed, H. Wang, J. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. Shur

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Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters, J.P. Zhang, E. Kuokstis, Q. Fareed, H.M. Wang, J.W. Yang, Grigory Simin, M. Asif Khan, G. Tamulaitis, G. Kurilcik, S. Jursenas, A. Zukauskas, R. Gaska, and M. Shur

Submissions from 2000

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SiO2-Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors, V. Adivarahan, Grigory Simin, J. W. Yang, A. Lunev, M. Asif Khan, M. Pala, M. Shur, and R. Gaska

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High-Quality p-n Junctions with Quaternary AlInGaN/InGaN Quantum Wells, A. Chitnis, A. Kumar, M. Shatalov, V. Adivarahan, A. Lunev, J. W. Yang, Grigory Simin, M. Asif Khan, R. Gaska, and M. Shur

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High Performance Micropane Electron Beam Window, Roger A. Dougal and Shengyi Liu

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High Electron Mobility in AlGaN/GaN Heterostructures Grown on Bulk GaN Substrates, E. Frayssinet, W. Knap, P. Lorenzini, N. Grandjean, J. Massies, C. Skierbiszewski, T. Suski, I. Grzegory, S. Porowski, Grigory Simin, X. Hu, M. Asif Khan, M. S. Shur, R. Gaska, and D. Maude

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Enhancement Mode AlGaN/GaN HFET with Selectively Grown PN Junction Gate, X. Hu, Grigory Simin, J. Yang, M. A. Khan, R. Gaska, and M. S. Shur

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AlGaN/GaN Metal Oxide Semiconductor Heterostructure Field Effect Transistor, M. A. Khan; X. Hu; Grigory Simin; A, Lunev; J. Yang; R. Gaska; and M. S. Shur

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AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors on SiC Substrates, M. Asif Khan, X. Hu, A. Tarakji, Grigory Simin, J. Yang, R. Gaska, and M. S. Shur

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GaN-AlGaN Heterostructure Field-Effect Transistors over Bulk GaN Substrates, M. Asif Khan, J. W. Yang, W. Knap, E. Frayssinet, X. Hu, Grigory Simin, P. Prystawko, M. Leszczynski, I. Grzegory, S. Porowski, R. Gaska, M. S. Shur, B. Beaumont, M. Teisseire, and G. Neu

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Lattice and Energy Band Engineering in AlInGaN/Ga Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, Hans-Conrad zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius

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3D Outside Cell Interference Factor for an Air-Ground CDMA ‘Cellular’ System, David W. Matolak

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Low-Frequency Noise in AlGaN/GaN MOS-HFETs, N. Pala, R. Gaska, S. Rumyantsev, M. S. Shur, M. Asif Khan, X. Hu, Grigory Simin, and J. Yang

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Effect of Gate Leakage Current on Noise Properties of AlGaN/GaN Field Effect Transistors, S. L. Rumyantsev, N. Pala, M. S. Shur, R. Gaska, M. E. Levinshtein, M. Asif Khan, Grigory Simin, X. Hu, and J. Yang

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Transient Processes in AlGaN/GaN Heterostructure Field Effect Transistors, S. L. Rumyantsev, M. S. Shur, R. Gaska, X. Hu, A. Khan, Grigory Simin, J. Yang, N. Zhang, S. DenBaars, and U.K. Mishra

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Ultrafast Electronic Relaxation Dynamics in Layered Iodide Semiconductors:  A Comparative Study of Colloidal BiI3 and PbI2 Nanoparticles, A. Sengupta, K. C. Mandal, and J. Z. Zhang

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Accumulation Hole Layer in p-GaN/AlGaN Heterostructures, M. S. Shur, A. D. Bykhovski, R. Gaska, J. W. Yang, Grigory Simin, and M. A. Khan

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7.5 kW/mm2 Current Swith using AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates, Grigory Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M. A. Khan, R. Gaska, and M. S. Shur

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Optical Bandgap Formation in AlInGaN Alloys, G. Tamulaitis, K. Kazlauskas, S. Juršėnas, A. Žukauskas, M. A. Khan, J. W. Yang, J. Zhang, Grigory Simin, M. S. Shur, and R. Gaska

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Selective Area Deposited Blue GaN-InGaN Multiple-Quantum Well Light Emitting Diodes over Silicon Substrates, J. W. Yang, A. Lunev, Grigory Simin, A. Chitnis, M. Shatalov, M. Asif Khan, Joseph E. Van Nostrand, and R. Gaska

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Enhanced Luminescence in InGaN Multiple Quantum Wells with Quaternary AlInGaN Barriers, Jianping Zhang, J. Yang, Grigory Simin, M. Shatalov, M. Asif Khan, M. S. Shur, and R. Gaska

Submissions from 1999

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Piezoelectric Doping in AlInGaN/GaN Heterostructures, M. Asif Khan, J. W. Yang, Grigory Simin, R. Gaska, M. S. Shur, and A. D. Bykovski

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Energy Band/Lattice Mismatch Engineering in Quaternary AlInGaN/GaN Heterostructure, M. Asif Khan, J. W. Yang, Grigory Simin, H. zur Loye, R. Bicknell-Tassius, R. Gaska, M. S. Shur, G. Tamulaitis, and A. Zukauskas

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Low-Frequency Noise in n-GaN with High Electron Mobility, M. E. Levinshtein, S. L. Rumyantsev, D. C. Look, R. J. Molnar, M. Asif Khan, Grigory Simin, V. Adivarahan, and M. S. Shur

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Low 1/f Noise in AlGaN/GaN HFETs on SiC Substrates, S. Rumyantsev, M. E. Levinshtein, R. Gaska, M. S. Shur, A. Khan, J. W. Yang, Grigory Simin, A. Ping, and T. Adesida

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Ultrafast Electronic Relaxation Dynamics in PbI2 Semiconductor Colloidal Nanoparticles:  A Femtosecond Transient Absorption Study, A. Sengupta, B. Jiang, K. C. Mandal, and J. Z. Zhang

Submissions from 1998

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Growth, Characterization and Spectroscopic Investigations of InI Crystals for Optical and Radiation Detector Applications, K. C. Mandal, M. Klugerman, L. J. Cirignano, L. P. Moy, K. S. Shah, M. R. Squillante, and R. N. Bhattacharyya

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Characterization of X-Ray Imaging Properties of PbI2 Films, K. S. Shah, P. Bennett, L. Cirignano, Y. Dmitriyev, M. Klugerman, K. C. Mandal, L. P. Moy, and R. A. Street

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X-Ray Imaging with Semiconductor Films, K. S. Shah, P. R. Bennett, L. J. Cirignano, Y. N. Dmitriyev, M. B. Klugerman, K. C. Mandal, L. P. Moy, and R. A. Street

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Deriving of Single Intensive Picosecond Optical Pulses from a High-Power Gain-Switched Laser Diode by Spectral Filtering, S. N. Vainshtein, Grigory Simin, and J. T. Kostamovaara

Submissions from 1996

Review of Technologies for Current-Limiting Low-Voltage Circuit Breakers, Charles W. Brice, Roger A. Dougal, and J. L. Hudgins

Current-Limiting Thermistors for High-Power Applications, Roger A. Dougal

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Detection for a Statistically-Known, Time-Varying Dispersive Channel, David W. Matolak and S. G. Wilson

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Variable-Complexity Trellis Decoding of Binary Convolutional Codes, David W. Matolak and S. G. Wilson

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Low-Frequency Noise in 4H-Silicon Carbide Junction Field Effect Transistors, J. W. Palmour, M. E. Levinshtein, S. L. Rumyantsev, and Grigory Simin

Submissions from 1995

Streamer Model for Ionization Growth in a Photoconductive Power Switch, Roger A. Dougal

Submissions from 1994

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Fabrication of Low-Cost n-Sb2S3/p-Ge Heterojunction Solar Cells, O. Savadogo and K. C. Mandal

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Low Cost Schottky Barrier Solar Cells Fabricated on CdSe and Sb2S3 Films Chemically Deposited with Silicotungstic Acid, O. Savadogo and K. C. Mandal

Submissions from 1993

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Modulated Infrared Spectroscopy at the Electrochemical Interface, J. N. Chazalviel, V. M. Dubin, K. C. Mandal, and F. Ozanam

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Low‐Cost Technique for Preparing n‐Sb2S3/p‐Si Heterojunction Solar Cells, O. Savadogo and K. C. Mandal

Submissions from 1992

Voltage-Drop Calculations and Power-Flow Studies for Rural Electric Distribution Lines, Charles W. Brice

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In-Situ FTIR Spectroscopy at the Electrochemical Interface: The Interest of a Modulation Technique, J.-N. Chazalviel, K. C. Mandal, and F. Ozanam

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In-situ Infrared Investigations of the Electrochemistry of Heteropolyacids at n-Ge Electrodes, K. C. Mandal, F. Ozanam, and J.-N. Chazalviel

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Chemically Deposited n-CdSe Thin Film Photo-Electrochemical Cells: Effects of Zn2+-Modification, K. C. Mandal and O. Savadogo

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Characterizations of Antimony Tri‐Sulfide Chemically Deposited with Silicotungstic Acid, O. Savadogo and K. C. Mandal

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Improved Schottky Barrier on n-Sb2S3 Films Chemically Deposited with Silicotungstic Acid, O. Savadogo and K. C. Mandal

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Photoelectrochemical (PEC) Solar Cell Properties of Chemically Deposited Cadmium Selenide Thin Films with Heteropolyacids, O. Savadogo and K. C. Mandal

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Studies on New Chemically Deposited Photoconducting Antimony Trisulphide Thin Films, O. Savadogo and K. C. Mandal

Submissions from 1991

Design of a New Electromechanical Systems Instructional Laboratory, Charles W. Brice

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Studies of Sub-Bandgap Response on Surface-Modified n-CdSe Photoelectrodes, K. C. Mandal and K. S. V. Santhanam

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A New Chemical Method of Preparing Semiconducting MoX2 (X=S, Se) Thin Films, K. C. Mandal and O. Savadogo

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High-Efficiency Chemically Deposited CdSe Photoelectrochemical Solar Cells: Effect of SiW12O404- Incorporation, K. C. Mandal and O. Savadogo

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Novel Chemical Preparative Route for Semiconducting MoSe2 Thin Films, K. C. Mandal and O. Savadogo

Submissions from 1990

Simulation of Magnetic Switching Action in High-Power Systems, Roger A. Dougal

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Fermi Level Shift with Photovoltages at Zinc Modified CdSe Surfaces, K. C. Mandal

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A New Chemical Method for Preparing Semiconductor Grade Antimony Tri-Sulphide Thin Films, K. C. Mandal and A. Mondal

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Chemically Deposited Semiconducting Molybdenum Sulfide Thin Films, K. C. Mandal and A. Mondal

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In situ Infrared Evidence for the Electrochemical Incorporation of Hydrogen into Si and Ge, K. C. Mandal, F. Ozanam, and J.-N. Chazalviel

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A Comparative Study of CdTe Films Prepared by Different Techniques, G. S. Sanyal, A. Mondal, K. C. Mandal, B. Ghosh, H. Saha, and M. K. Mukherjee

Submissions from 1989

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XPS Investigation of CdTe Surfaces: Effect of Ru Modification, D. N. Bose, M. S. Hedge, S. Basu, and K. C. Mandal

Submissions from 1988

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Characterization of Chemically Modified CdTe Surfaces, D. N. Bose, S. Basu, and K. C. Mandal

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CdTe Photoelectrochemical Solar Cells—Chemical Modification of Surfaces, K. C. Mandal, S. Basu, and D. N. Bose

Submissions from 1987

Partial Discharge Characteristics in Barium-Titanate Multilayered Structures - Effect of Material and Structural Parameters, Roger A. Dougal

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Surface-to-Surface Transition via Electromagnetic Coupling of Coplanar Waveguides, Robert W. Jackson and David W. Matolak

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Correlation of Fermi Level Shift with Photovoltages at Ruthenium-Modified CdTe Surfaces, K. C. Mandal

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Effects of Surface Modification on n-Cadmium Telluride Photoelectrochemical Solar Cells, K. C. Mandal, S. Basu, and D. N. Bose

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Moment Method Analysis of the Electric Field Under EHV Transmission Lines, T. L. Simpson and Charles W. Brice

Submissions from 1986

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Evidence for Amphoteric Behavior of Ru on CdTe Surfaces, D. N. Bose, S. Basu, K. C. Mandal, and D. Mazumdar

Mechanisms of Surface Flashover Along Solid Dielectrics in Compressed Gases - A Review, Tangali S. Sudarshan and Roger A. Dougal

Submissions from 1985

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Modeling and System Identification of Residential Air Conditioning Load, Anil Pahwa and Charles W. Brice

Submissions from 1984

Pre-Breakdown and Breakdown Phenomena Along PMMA Surfaces in Vacuum and Nitrogen Gas Stressed By 60 Hz Voltages, Roger A. Dougal

Submissions from 1980

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Simple Method to Determine the Main Gunn Domain Parameters, M. E. Levinshtein and Grigory Simin