Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC with Oxide-Bridging

Author(s)

Grigory Simin, University of South Carolina - ColumbiaFollow
X. Hu
N. Ilinskaya
J. Zhang
A. Tarakji
A. Kumar
J. Yang
M. Asif Khan
R. Gaska
M. S. Shur

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 22, Issue 2, 2001, pages 53-55.

©IEEE Electron Device Letters 2001, Institute of Electrical and Electronics Engineers (IEEE).

Simin, G., Hu, X., Ilinskaya, N., Zhang, J., Tarakji, A., Kumar, A., Yang, J., Khan, M. A., Gaska, R., & Shur, M. S. (February 2001). Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC with Oxide-Bridging. IEEE Electron Device Letters, 22 (2), 53-55. http://dx.doi.org/10.1109/55.902829

Rights

©IEEE Electron Device Letters 2001, Institute of Electrical and Electronics Engineers (IEEE).

Simin, G., Hu, X., Ilinskaya, N., Zhang, J., Tarakji, A., Kumar, A., Yang, J., Khan, M. A., Gaska, R., & Shur, M. S. (February 2001). Large Periphery High-Power AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC with Oxide-Bridging. IEEE Electron Device Letters, 22 (2), 53-55. http://dx.doi.org/10.1109/55.902829