AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor

Author(s)

Grigory Simin, University of South Carolina - ColumbiaFollow
Xuhong Hu
Ahmad Tarakji
Jianping Zhang
Alexey Koudymov
Salih Saygi
Jinwei Yang
M. Asif Khan
Michael S. Shur
Remis Gaska

Document Type

Article

Publication Info

Published in Japanese Journal of Applied Physics, Volume 40, Issue 2-11A, 2001, pages L1142-L1144.

©Japanese Journal of Applied Physics 2001, Japanese Society of Applied Physics.

Simin, G., Hu, X., Tarakji, A., Zhang, J., Koudymov, A., Saygi, S., Yang, J., Khan, A., Shur, M. S., & Gaska, R. (November 2001). AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor. Japanese Journal of Applied Physics, 40 (2-11A), L1142-L1144. http://dx.doi.org/10.1143/JJAP.40.L1142

Rights

©Japanese Journal of Applied Physics 2001, Japanese Society of Applied Physics.

Simin, G., Hu, X., Tarakji, A., Zhang, J., Koudymov, A., Saygi, S., Yang, J., Khan, A., Shur, M. S., & Gaska, R. (November 2001). AlGaN/InGaN/GaN Double Heterostructure Field-Effect Transistor. Japanese Journal of Applied Physics, 40 (2-11A), L1142-L1144. http://dx.doi.org/10.1143/JJAP.40.L1142