Thin n-GaN Films with Low Level of 1/f Noise

Document Type

Article

Rights

©Electronics Letters 2001, The Institution of Engineering and Technology.

Rumyantsev, S. L., Pala, N., Shur, M. S., Gaska, R., Levinshtein, M. E., Khan, M. A., Simin, G., Hu, X., & Yang, J. (24 May 2001). Thin n-GaN Films with Low Level of 1/f Noise. Electronics Letters, 37 (11), 720-721. http://dx.doi.org/10.1049/el:20010468

Share

COinS