Thin n-GaN Films with Low Level of 1/f Noise

Author(s)

S. L. Rumyantsev
N. Pala
M. S. Shur
R. Gaska
M. E. Levinshtein
M. A. Khan
Grigory Simin, University of South Carolina - ColumbiaFollow
X. Hu
J. Yang

Document Type

Article

Publication Info

Published in Electronics Letters, Volume 37, Issue 11, 2001, pages 720-721.

©Electronics Letters 2001, The Institution of Engineering and Technology.

Rumyantsev, S. L., Pala, N., Shur, M. S., Gaska, R., Levinshtein, M. E., Khan, M. A., Simin, G., Hu, X., & Yang, J. (24 May 2001). Thin n-GaN Films with Low Level of 1/f Noise. Electronics Letters, 37 (11), 720-721. http://dx.doi.org/10.1049/el:20010468

Rights

©Electronics Letters 2001, The Institution of Engineering and Technology.

Rumyantsev, S. L., Pala, N., Shur, M. S., Gaska, R., Levinshtein, M. E., Khan, M. A., Simin, G., Hu, X., & Yang, J. (24 May 2001). Thin n-GaN Films with Low Level of 1/f Noise. Electronics Letters, 37 (11), 720-721. http://dx.doi.org/10.1049/el:20010468