Low-Frequency Noise in AlGaN/GaN MOS-HFETs

Author(s)

N. Pala
R. Gaska
S. Rumyantsev
M. S. Shur
M. Asif Khan
X. Hu
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Yang

Document Type

Article

Publication Info

Published in Electronics Letters, Volume 36, Issue 3, 2000, pages 268-270.

©Electronics Letters 2000, The Institute of Engineering and Technology.

Pala, N., Gaska, R., Rumyantsev, S., Shur, M. S., Khan, M. A., Hu, X., Simin, G., & Yang, J. (3 February 2000) Low-Frequency Noise in AlGaN/GaN MOS-HFETs. Electronics Letters, 36 (3), 268-270. http://dx.doi.org/10.1049/el:20000171

Rights

©Electronics Letters 2000, The Institute of Engineering and Technology.

Pala, N., Gaska, R., Rumyantsev, S., Shur, M. S., Khan, M. A., Hu, X., Simin, G., & Yang, J. (3 February 2000) Low-Frequency Noise in AlGaN/GaN MOS-HFETs. Electronics Letters, 36 (3), 268-270. http://dx.doi.org/10.1049/el:20000171