Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes

Author(s)

Jian Ping Zhang
Vinod AdivarahanFollow
Hong Mei Wang
Qhalid Fareed
Edmundas Kuokstis
Ashay Chitnis
Maxim Shatalov
Jin Wei Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
Muhammad Asif Khan
Michael Shur
Remis Gaska

Document Type

Article

Publication Info

Published in Japanese Journal of Applied Physics, Volume 40, Issue 2-#9A/B, 2001, pages L921-L924.

©Japanese Journal of Applied Physics 2001, Japanese Society of Applied Physics.

Zhang, J. P., Adivarahan, V., Wang, H. M., Fareed, Q., Kuokstis, E., Chitnis, A., Shatalov, M., Yang, J. W., Simin, G., Khan, M. A., Shur, M. & Gaska, R. (September 2001). Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes. Japanese Journal of Applied Physics, 40 (2-#9A/B), L921-L924. http://dx.doi.org/10.1143/JJAP.40.L921

Rights

©Japanese Journal of Applied Physics 2001, Japanese Society of Applied Physics.

Zhang, J. P., Adivarahan, V., Wang, H. M., Fareed, Q., Kuokstis, E., Chitnis, A., Shatalov, M., Yang, J. W., Simin, G., Khan, M. A., Shur, M. & Gaska, R. (September 2001). Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes. Japanese Journal of Applied Physics, 40 (2-#9A/B), L921-L924. http://dx.doi.org/10.1143/JJAP.40.L921