Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors

Author(s)

V. AdivarahanFollow
Grigory Simin, University of South Carolina - ColumbiaFollow
G. Tamulaitis
R. Srinivasan
J. Yang
M. Asif Khan
M. S. Shur
R. Gaska

Document Type

Article

Abstract

We report on an indium–silicon co-doping approach for high-Al-content AlGaN layers. Using this approach, very smooth crack-free n-type AlGaN films as thick as 0.5 μm with Al mole fraction up to 40% were grown over sapphire substrates. The maximum electron concentration in the layers, as determined by Hall measurements, was as high as 8×10¹⁷ cm⁻³ and the Hall mobility was up to 40 cm²/Vs. We used this doping technique to demonstrate solar-blind transparent Schottky barrierphotodetectors with the cut-off wavelength of 278 nm.

Publication Info

Published in Applied Physics Letters, Volume 79, Issue 12, 2001, pages 1903-1905.

Rights

©Applied Physics Letters 2001, American Institute of Physics (AIP).

Adivarahan ,V., Simin, G., Tamulaitis, G., Srinivasan, R., Yang, J., Khan, M. A., Shur, M. S., & Gaska, R. (17 September 2001). Indium-Silicon Co-Doping of High-Aluminum-Content AlGaN for Solar Blind Photodetectors. Applied Physics Letters, 79 (12), 1903-1905. http://dx.doi.org/10.1063/1.1402159