Luminescence Mechanisms in Quaternary Al_xIn_yGa_1-x-yN Materials

Author(s)

Mee-Yi Ryu
C. Q. ChenFollow
E. Kuokstis
J. W. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan

Document Type

Article

Abstract

Low-temperature photoluminescence investigations have been carried out in the quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by pulsedmetalorganic chemical-vapor deposition (PMOCVD). With increasing excitation power density, the emission peaks in both AlInGaN epilayers and MQWs show a strong blueshift and theirlinewidths increase. The luminescence of the samples grown by PMOCVD is attributed to recombination of carriers/excitons localized at band-tail states. We also demonstrate theluminescence properties of AlInGaN and AlGaN materials grown by a pulsed atomic-layerepitaxy and conventional MOCVD, respectively.

Publication Info

Published in Applied Physics Letters, Volume 80, Issue 20, 2002, pages 3730-3732.

Rights

©Applied Physics Letters 2002, American Institute of Physics (AIP).

Ryu, M-Y., Chen, C. Q., Kuokstis, E., Yang, J. W., Simin, G., & Khan, M. A. (13 May 2002). Luminescence Mechanisms in Quaternary Al_xIn_yGa_1-x-yN Materials. Applied Physics Letters, 80 (20), 3730-3732. http://dx.doi.org/10.1063/1.1481766