On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs

Author(s)

S. L. Rumyantsev
Y. Deng
S. Shur
M. E. Levinshtein
M. A. Khan
Grigory Simin, University of South Carolina - ColumbiaFollow
J. Yang
X. Hu
R. Gaska

Document Type

Article

Publication Info

Published in Semiconductor Science and Technology, Volume 18, Issue 6, 2003, pages 589-593.

©Semiconductor Science and Technology 2003, Institute of Physics Publishing.

Rumyantsev, S. L., Deng, Y., Shur, S., Levinshtein, M. E., Khan, M. A., Simin, G., Yang, J., Hu, X., & Gaska, R. (13 May 2003). On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs. Semiconductor Science and Technology, 18 (6), 589-593. http://dx.doi.org/10.1088/0268-1242/18/6/333

Rights

©Semiconductor Science and Technology 2003, Institute of Physics Publishing.

Rumyantsev, S. L., Deng, Y., Shur, S., Levinshtein, M. E., Khan, M. A., Simin, G., Yang, J., Hu, X., & Gaska, R. (13 May 2003). On the Lower Frequency Noise Mechanisms in GaN/AlGaN HFETs. Semiconductor Science and Technology, 18 (6), 589-593. http://dx.doi.org/10.1088/0268-1242/18/6/333