Document Type
Article
Abstract
High voltage (∼2 kV) Al0.64Ga0.36N-channel high electron mobility transistors were fabricated with an on-resistance of ∼75 Ω. mm (∼21 mΩ. cm2). Two field plates of variable dimensions were utilized to optimize the breakdown voltage. The breakdown voltage reached >3 kV (tool limit) before passivation however it reduced to ∼2 kV after Si3N4 surface passivation and field plate deposition. The breakdown voltage and on-resistance demonstrated a strong linear correlation in a scattered plot of ∼50 measured transistors. The fabricated transistors were electrically characterized and benchmarked against the state-of-the-art high-voltage (> 1 kV) Al-rich (>40%) AlGaN-channel transistors in breakdown voltage and on-resistance, indicating significant progress.
Digital Object Identifier (DOI)
Publication Info
Published in Applied Physics Express, Volume 18, Issue 1, 2025, pages 016504-.
Rights
© 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
APA Citation
Alam, M. T., Chen, J., Stephenson, K., Mamun, M. A.-A., Mazumder, A. A. M., Pasayat, S. S., Khan, A., & Gupta, C. (2025). 2 kV Al0.64Ga0.36N-channel high electron mobility transistors with passivation and field plates. Applied Physics Express, 18(1), 016504. https://doi.org/10.35848/1882-0786/ad9db4