AI_xGa_1−xN (0.7 < x < 1) Schottky Diodes Using Distributed Polarization Doped Layer with a Current Density of 14 kA/cm²

Author(s)

• Tariq Jamil
• Abdullah Al Mamun Mazumder
• Mafruda Rahman
• Muhammad Ali
• Grigory Simin, University of South CarolinaFollow
• M. Asif Khan, University of South CarolinaFollow

Document Type

Article

Abstract

High Al-content Al_xGa_1-xN (0.7 < x < 1) quasi-vertical Schottky barrier diodes (SBDs) with distributed polarization doping were grown on the bulk AlN substrate. They exhibit excellent rectification behavior with a large forward current density (~14 kA/cm² ) and a high breakdown field of ~8.3 MV/cm. The SBDs also exhibited low ideality factors of (n~1.2) with a high Schottky barrier height (Φ _b~ 1.7 eV). Thus, this study demonstrates the feasibility of the distributed polarization doping approach for high current–high voltage devices.

Digital Object Identifier (DOI)

https://doi.org/10.1063/5.0325830

Publication Info

Published in Applied Physics Letters, Volume 128, 2026, pages 133501-.

Rights

ڣ2026 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). 

APA Citation

Jamil, T., Al, A., Mazumder, M., Rahman, M., Muhammad, Grigory, A., & Khan, A. (2026). AI_xGa_1−xN (0.7 < x < 1) Schottky Diodes Using Distributed Polarization Doped Layer with a Current Density of 14 kA/cm². Applied Physics Letters, 128, 133501.https://doi.org/10.1063/5.0325830