Extreme Bandgap Polarization Doped AlGaN Layers on Bulk AlN for pn-diodes With an 8.5 MV cm⁻¹ Breakdown Field and Forward Current Density Exceeding 20 kA Cm⁻²

Author(s)

Tariq Jamil
Abdullah Al Mamun Mazumder
Muhammad Ali
Mafruda Rahman
Kenneth Stephenson
Grigory Simin, University of South CarolinaFollow
Asif Khan, University of South CarolinaFollow

Document Type

Article

Abstract

In this paper we present a study of distribution polarization doped Al_xGa_1−xN layers and their use in quasi-vertical configuration pn-diodes which exhibited a high breakdown field of ∼8.5 MV cm⁻¹ and a large forward current density (∼23 kA cm⁻²). We also establish their potential use in UVC light emitters by studying the optical emission from a quantum well inserted at the distribution polarization doped pn-junction interface.

Digital Object Identifier (DOI)

https://doi.org/10.35848/1347-4065/add2b6

Publication Info

Published in Japanese Journal of Applied Physics, Volume 64, Issue 5, 2025, pages 055507-.

Rights

© 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Content from this work may be used under the terms of the Creative Commons Attribution 4.0 license. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.

APA Citation

Jamil, T., Mazumder, A. A. M., Ali, M., Rahman, M., Stephenson, K., Simin, G., & Khan, A. (2025). Extreme bandgap polarization doped AlGaN layers on bulk AlN for pn-diodes with an 8.5 MV cm⁻¹ breakdown field and forward current density exceeding 20 kA cm⁻². Japanese Journal of Applied Physics, 64(5), 055507. https://doi.org/10.35848/1347-4065/add2b6