Document Type
Article
Abstract
In this paper we describe a pulsed metalorganic chemical vapor deposition (MOCVD) Si-doping approach for AlN epilayers over bulk AlN. The Al-rich growth/doping conditions in the pulsed MOCVD process resulted in n-AlN layers with transmission line model currents that were an order higher than for structures on layers that were grown/doped at identical temperatures using the conventional MOCVD process. Our work demonstrated that like the other reported approaches such as UV exposure during growth, the pulsed MOCVD process is also very effective in reducing point defects by the defect quasi-Fermi level-chemical potential control.
Digital Object Identifier (DOI)
Publication Info
Published in Applied Physics Express, Volume 18, Issue 2, 2025, pages 025501-.
Rights
© 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd Content from this work may be used under the terms of the Creative Commons Attribution 4.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
APA Citation
Jamil, T., Mazumder, A. A. M., Rahman, M., Ali, M., Lin, J., Jiang, H., Simin, G., & Khan, A. (2025). Si-doped AlN using pulsed metalorganic chemical vapor deposition and doping. Applied Physics Express, 18(2), 025501.https://doi.org/10.35848/1882-0786/adadc2