Document Type
Article
Abstract
We report on the study of high-field performance of Si-doped n-AlN layers that were grown using a pulsed metalorganic chemical vapor deposition (PMOCVD) process. In the past we showed this pulsed doping approach to lead to doping efficiency superior to that in the conventional MOCVD process. Here using them as the drift layer for a quasi-vertical conduction Schottky barrier, we show their ability to withstand high reverse bias voltages and sustain an electrical field as high as 9.9 MV cm−1. Our study thus demonstrates the viability of the PMOCVD growth and doping approach to yield n-AlN layers suitable for high current-high voltage devices.
Digital Object Identifier (DOI)
Publication Info
Published in Applied Physics Express, Volume 18, Issue 6, 2025.
Rights
© 2025 The Author(s). Published on behalf of The Japan Society of Applied Physics by IOP Publishing Ltd Content from this work may be used under the terms of the Creative Commons Attribution 4.0 License. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI.
APA Citation
Mazumder, A. A. M., Jamil, T., Rahman, M., Ali, M., Simin, G., & Khan, A. (2025). High field performance of Si-doped n-AlN layers grown using pulsed MOCVD. Applied Physics Express, 18(6), 065501. https://doi.org/10.35848/1882-0786/ade41c