Document Type
Article
Abstract
Herein, the first demonstration of hybrid high-k oxide (ZrO2-Al2O3) incorporation into extreme bandgap (EBG) Al0.87Ga0.13N/Al0.64Ga0.36N metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) is presented, with both planar and recessed-gate designs on the same AlN/sapphire template with a state-of-the-art low contact resistance of 1.4 Ω mm (contact resistivity, ρc ≈ 5.7 × 10−6 Ω cm2). The recessed-gate MOSHFETs achieve a threshold voltage shift of ΔVTH = 5.8 V, highlighting improved channel control. Static output measurements reveal a peak drain current (IDS) of 340 mA mm−1 for the planar gate and 280 mA mm−1 for the recessed gate at VGS = +8 V, with corresponding on–off current ratios of ≈106 and ≈108. The recessed-gate structure demonstrates reduced gate leakage and minimal hysteresis, indicating robust fabrication processes with negligible impact on interface states. Transfer characteristics further show a peak transconductance (gm) of 31 and 45 mS mm−1 for the plain and recessed structures, respectively. These findings establish EBG recessed-gate MOSHFETs as a promising solution for advanced power devices requiring precise threshold voltage control, enhanced on-state current, and reduced leakage currents.
Digital Object Identifier (DOI)
Publication Info
Published in physica status solidi a, Volume 222, Issue 23, 2025, pages 2500056-.
Rights
© 2025 The Author(s). physica status solidi (a) applications and materials science published by Wiley-VCH GmbH
This is an open access article under the terms of the Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.
APA Citation
Mazumder, A. A. M., Mamun, A., Stephenson, K., Hussain, K., Jamil, T., Simin, G., & Khan, A. (2025). Extreme Bandgap Recessed‐Gate Metal Oxide Semiconductor Heterostructure Field Effect Transistors with Drain Current 0.28 A mm −1 and Threshold Voltage −1.5 V. Physica Status Solidi (A), 222(23). https://doi.org/10.1002/pssa.202500056