Extreme Bandgap Al_0.63Ga_0.37N Quasivertical Schottky Barrier Diodes with a High Baliga Figure of Merit of 630 MW cm₋₂

Author(s)

Abdullah Al Mamun Mazumder

Document Type

Article

Abstract

"Extreme bandgap n-Al_0.63Ga_0.37N quasi-vertical Schottky barrier diodes (SBDs) with doping densities of ≈8 × 10¹⁷cm⁻³ (Sample A) and ≈2 × 10¹⁷cm⁻³ (Sample B) are grown on an AlN/sapphire substrate using metalorganic-chemical vapor deposition (MOCVD). Sample A achieves a high forward current density of ≈59.5 kA cm⁻² at 10 V with an I_ON/I_OFF ratio of ≈10⁸ (calculated from the forward current at + 3.8 V and the reverse current at −1 V) and an ideality factor of 2.8. Sample B has a forward current density of ≈6.25 kA cm−2 and a much better ideality factor of 1.9. For Sample B, a breakdown voltage of 389 V is measured, which translates into a breakdown field of ≈7.8 MV cm⁻¹ and a Baliga figure of merit of 630 MW cm⁻², which are the highest values ever reported for quasi-vertical Schottky barrier diodes with a similar Al_xGa_1−xN composition.

Digital Object Identifier (DOI)

https://doi.org/10.1002/pssa.202500057

Publication Info

Published in physica status solidi_a, Volume 222, Issue 23, 2025.

Rights

© 2025 The Author(s). physica status solidi (a) applications and materials science published by Wiley-VCH GmbH

This is an open access article under the terms of the Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.

APA Citation

Mazumder, A. A. M., Mollah, S., Hussain, K., Mamun, A., Hwang, S., Jamil, T., Simin, G., & Khan, A. (2025). Extreme Bandgap Al_0.63Ga _0.37N Quasivertical Schottky Barrier Diodes with a High Baliga Figure of Merit of 630 MW cm ⁻². Physica Status Solidi (A), 222(23).

https://doi.org/10.1002/pssa.202500057