ORCID iD
0009-0004-2476-0423
Document Type
Poster
Abstract
Gallium oxide (Ga₂O₃), an ultrawide bandgap semiconductor with a bandgap of 4.6 eV and a high critical electric field of 10.3 MV/cm, offers strong potential for high-performance avalanche photodetectors (APDs). This project explores the design and characterization of a Ga₂O₃-based APD featuring doped and undoped epitaxial layers optimized for high electric field generation and low thermal conductivity, enabling stable operation in high-temperature environments. Simulation results show a uniform electric field of 1 MV/cm under a 100 V applied bias, while material characterization confirms excellent surface smoothness with a mean roughness of ~1.1 nm and an electron mobility of 21.7 cm²/V·s at a doping level of 1.8×10¹⁷ cm⁻³. The device demonstrates promise for integration in optical rangefinders, X-ray spectroscopy, particle detectors, and vehicle safety systems. Supported by NSF Grants #2124624 and #2329786, this research establishes a foundation for Ga₂O₃-based photodetectors with robust performance and scalability.
Publication Info
Spring 2024.
Rights
© Muhammad Hassan Tahir, Nifat Jahan, and Md Ghulam Zakir
APA Citation
Tahir, MH, Jahan, N & Zakir, M. . (2024) Gallium Oxide Based Avalanche Photo Detector [Poster presentation]. Discovery at USC. Columbia, South Carolina.
Included in
Electrical and Electronics Commons, Electronic Devices and Semiconductor Manufacturing Commons