Document Type
Article
Abstract
In this Brief Report we study theoretically the propagation of electron spin polarization through an interface separating two n-type semiconductor regions within the two-component drift-diffusion model in an applied electric field. It is assumed that inhomogeneous spin polarization is created locally by a continuous source of spin polarization and is driven through the boundary by the electric field. The spin polarization distribution is calculated analytically. We find that for specific values of parameters describing the system, the electron spin polarization is accumulated near the interface. A simple analytical expression for the amplitude of spin accumulation as a function of the system parameters is found. The obtained results will be useful in designing new spintronic devices.
Publication Info
Published in Physical Review B, ed. Gene D. Sprouse, Volume 68, Issue 23, 2003, pages 233309-1-233309-4.
Pershin, Y. V. (2003). Accumulation of electron spin polarization at semiconductor interfaces. Physical Review B, 68(23), 233309-1 - 233309-4. DOI: 10.1103/PhysRevB.68.233309
© Physical Review B, 2003, American Physical Society
Rights
Pershin, Y. V. (2003). Accumulation of electron spin polarization at semiconductor interfaces. Physical Review B, 68(23), 233309-1 - 233309-4. DOI: 10.1103/PhysRevB.68.233309
© Physical Review B, 2003, American Physical Society