Document Type
Article
Abstract
Recently, in addition to the well-known resistor, capacitor, and inductor, a fourth passive circuit element, named memristor, has been identified following theoretical predictions. The model example used in such case consisted in a nanoscale system with coupled ionic and electronic transport. Here, we discuss a system whose memristive behavior is based entirely on the electron-spin degree of freedom, which allows for a more convenient control than the ionic transport in nanostructures. An analysis of time-dependent spin transport at a semiconductor/ferromagnet junction provides a direct evidence of memristive behavior. Our scheme is fundamentally different from previously discussed schemes of memristive systems and broadens the possible range of applications of semiconductor spintronics.
Publication Info
Published in Physical Review B, ed. Gene D. Sprouse, Volume 78, Issue 11, 2008, pages 113309-1-113309-4.
Pershin, Y. V., & Di Ventra, M. (2008). Spin memristive systems: Spin memory effects in semiconductor spintronics. Physical Review B, 78(11), 113309-1 - 113309-4. DOI: 10.1103/PhysRevB.78.113309
© Physical Review B, 2008, American Physical Society
Rights
Pershin, Y. V., & Di Ventra, M. (2008). Spin memristive systems: Spin memory effects in semiconductor spintronics. Physical Review B, 78(11), 113309-1 - 113309-4. DOI: 10.1103/PhysRevB.78.113309
© Physical Review B, 2008, American Physical Society
