The low frequency noise in GaNfield effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2×10−3 to 3×10−3.Temperature dependence of the noise reveals a weak contribution of generation–recombination noise at elevated temperatures.
Published in Journal of Applied Physics, Volume 90, Issue 1, 2001, pages 310-314.
©Journal of Applied Physics 2001, American Institute of Physics (AIP).
Rumyantsev, S. L., Pala, N., Shur, M. S., Gaska, R., Levinshtein, M. E., Khan, M. A., Simin, G., Hu, X., & Yang, J. (1 July 2001). Low Frequency Noise in GaN Metal Semiconductor and Metal Oxide Semiconductor Field Effect Transistors. Journal of Applied Physics, 90 (1), 310-314. http://dx.doi.org/10.1063/1.1372364