Drain-to-Gate Field Engineering for Improved Frequency Response of GaN-Based HEMTs

Author(s)

N. Pala
X. Hu
J. Deng
J. Yang
R. Gaska
Z. Yang
A. Koudymov
M. S. Shur
Grigory Simin, University of South Carolina - ColumbiaFollow

Document Type

Article

Publication Info

Published in Solid-State Electronics, Volume 52, Issue 8, 2008, pages 1217-1220.

Rights

©Solid-State Electronics 2008, Elsevier.