Multigate GaN RF Switches With Capacitively Coupled Contacts

Author(s)

Grigory Simin, University of South Carolina - ColumbiaFollow
B. Khan
Jingbo Wang
A. Koudymov
M. Gaevski
R. Jain
J. Yang
X. Hu
R. Gaska
M. Shur

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 30, Issue 9, 2009, pages 895-897.

©IEEE Electron Device Letters 2009, Institute of Electrical and Electronics Engineers (IEEE).

Simin, G., Khan, B., Wang, J., Koudymov, A., Gaevski, M., Jain, R., Yang, J., Hu, X., Gaska, R., & Shur, M. (31 July 2009). Multigate GaN RF Switches with Capacitively Coupled Contacts. IEEE Electron Device Letters, 30 (9), 895-897. http://dx.doi.org/10.1109/LED.2009.2025675

Rights

©IEEE Electron Device Letters 2009, Institute of Electrical and Electronics Engineers (IEEE).

Simin, G., Khan, B., Wang, J., Koudymov, A., Gaevski, M., Jain, R., Yang, J., Hu, X., Gaska, R., & Shur, M. (31 July 2009). Multigate GaN RF Switches with Capacitively Coupled Contacts. IEEE Electron Device Letters, 30 (9), 895-897. http://dx.doi.org/10.1109/LED.2009.2025675