Assessment of 4H-SiC Epitaxial Layers and High Resistivity Bulk Crystals for Radiation Detectors

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
P. G. Muzykov
S. K. Chaudhuri
J. R. Terry

Document Type

Article

Subject Area(s)

Electrical Engineering, Spectroscopy

Publication Info

Published in Proceedings of SPIE, Volume 8507, 2012.

© Proceedings of SPIE 2012, SPIE

Mandal, K. C., Muzykov, P. G., Chaudhuri, S. K., & Terry, J. R. (2012). Assessment of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors. Proceedings of SPIE, 8507.

http://dx.doi.org/10.1117/12.946026

Rights

© Proceedings of SPIE 2012, SPIE

Mandal, K. C., Muzykov, P. G., Chaudhuri, S. K., & Terry, J. R. (2012). Assessment of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors. Proceedings of SPIE, 8507.

http://dx.doi.org/10.1117/12.946026