Defect Correlation Studies on 4H-SiC Crystals and Epitaxial Layers for Radiation Detector Applications

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
P. G. Muzykov
Ramesh Madhu Krishna, University of South CarolinaFollow
T. C. Hayes

Document Type

Article

Subject Area(s)

Electrical Engineering

Publication Info

Published in Nuclear Science Symposium and Medical Imaging Conference, 2011, pages 4776-4782.

© Nuclear Science Symposium and Medical Imaging Conference 2011, IEEE

Mandal, K. C., Muzykov, P. G., Krishna, R. M., & Hayes, T. C. (2011). Defect correlation studies on 4H-SiC crystals and epitaxial layers for radiation detector applications. Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE, 4776-4782.

http://dx.doi.org/10.1109/NSSMIC.2011.6154713

Rights

© Nuclear Science Symposium and Medical Imaging Conference 2011, IEEE

Mandal, K. C., Muzykov, P. G., Krishna, R. M., & Hayes, T. C. (2011). Defect correlation studies on 4H-SiC crystals and epitaxial layers for radiation detector applications. Nuclear Science Symposium and Medical Imaging Conference (NSS/MIC), 2011 IEEE, 4776-4782.

http://dx.doi.org/10.1109/NSSMIC.2011.6154713