Characterization of 4H Semi-Insulating Silicon Carbide for Radiation Detector Applications

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
P. G. Muzykov
Ramesh Madhu Krishna, University of South CarolinaFollow
Sandip Das, University of South Carolina - ColumbiaFollow
Tangali S. Sudarshan, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Electrical Engineering, Nuclear Science

Publication Info

Published in Nuclear Science Symposium and Medical Imaging Conference, 2010, pages 3725-3731.

© Nuclear Science Symposium Conference Record 2010, IEEE

Mandal, K. C., Muzykov, P. G., Krishna, R. M., Das, S., & Sudarshan, T. S. (2010). Characterization of 4H semi-insulating silicon carbide for radiation detector applications. Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE, 3725-3731.

http://dx.doi.org/10.1109/NSSMIC.2010.5874508

Rights

© Nuclear Science Symposium Conference Record 2010, IEEE

Mandal, K. C., Muzykov, P. G., Krishna, R. M., Das, S., & Sudarshan, T. S. (2010). Characterization of 4H semi-insulating silicon carbide for radiation detector applications. Nuclear Science Symposium Conference Record (NSS/MIC), 2010 IEEE, 3725-3731.

http://dx.doi.org/10.1109/NSSMIC.2010.5874508