Surface Passivation of p-GaTe Layered Crystals for Improved p-GaTe/n-InSe Heterojunction Solar Cells

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
Sandip Das, University of South Carolina - ColumbiaFollow
Ramesh Madhu Krishna, University of South CarolinaFollow
P. G. Muzykov, University of South Carolina - ColumbiaFollow
Shuguo Ma
F. Zhao

Document Type

Article

Subject Area(s)

Electrical Engineering

Publication Info

Published in MRS Proceedings, Volume 1269, 2010, pages 77-82.

© MRS Proceedings 2010, Cambridge University Press

Mandal, K. C., Das, S., Krishna, R., Muzykov, P. G., Ma, S., & Zhao, F. (2010). Surface passivation of p-GaTe layered crystals for improved p-GaTe/n-InSe heterojunction solar cells. MRS Proceedings, 1269, 77-82.

http://dx.doi.org/10.1557/PROC-1268-EE02-10

Rights

© MRS Proceedings 2010, Cambridge University Press

Mandal, K. C., Das, S., Krishna, R., Muzykov, P. G., Ma, S., & Zhao, F. (2010). Surface passivation of p-GaTe layered crystals for improved p-GaTe/n-InSe heterojunction solar cells. MRS Proceedings, 1269, 77-82.

http://dx.doi.org/10.1557/PROC-1268-EE02-10