Layered III-VI Chalcogenide Semiconductor Crystals for Radiation Detectors

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
A. Mertiri
G. W. Pabst
R. G. Roy
Y. Cui
P. Battacharya
M. Groza
A. Burger
A. M. Conway
R. J. Nikolic
A. J. Nelson
S. A. Payne

Document Type

Article

Subject Area(s)

Engineering, Photo-optics

Publication Info

Published in SPIE Proceedings, Volume 7079, 2008, pages 70790O-1-70790O-12.

© SPIE Proceedings 2008, Society of Photo-optical Instrumentation Engineers

Mandal, K. C., Mertiri, A., Pabst, G. W., Roy, R. G., Cui, Y., Battacharya, P., Groza, M., Burger, A., Conway, A. M., Nikolic, R. J., Nelson, A. J., & Payne, S. A. (4 September 2008). Layered III-VI chalcogenide semiconductor crystals for radiation detectors. SPIE Proceedings, 7079, # 70790O-1-12.

http://dx.doi.org/10.1117/12.796235

Rights

© SPIE Proceedings 2008, Society of Photo-optical Instrumentation Engineers

Mandal, K. C., Mertiri, A., Pabst, G. W., Roy, R. G., Cui, Y., Battacharya, P., Groza, M., Burger, A., Conway, A. M., Nikolic, R. J., Nelson, A. J., & Payne, S. A. (4 September 2008). Layered III-VI chalcogenide semiconductor crystals for radiation detectors. SPIE Proceedings, 7079, # 70790O-1-12.

http://dx.doi.org/10.1117/12.796235