Design, Fabrication, Characterization, and Evaluation of X-ray Detectors Based on n-type 4H-SiC Epitaxial Layer

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
P. G. Muzykov, University of South Carolina - ColumbiaFollow
J. R. Terry

Document Type

Article

Subject Area(s)

Electrical Engineering, Electrochemistry

Publication Info

Published in ECS Transactions, Volume 45, Issue 7, 2012, pages 27-33.

© ECS Transactions 2012, The Society for Solid-State and Electrochemical Science and Technology

Mandal, K. C., Muzykov, P. G., & Terry, J. R. (2012). Design, fabrication, characterization, and evaluation of X-ray detectors based on n-type 4H-SiC epilayers. ECS Transactions, 45(7), 27-33.

http://dx.doi.org/doi:10.1149/1.3701522

Rights

© ECS Transactions 2012, The Society for Solid-State and Electrochemical Science and Technology

Mandal, K. C., Muzykov, P. G., & Terry, J. R. (2012). Design, fabrication, characterization, and evaluation of X-ray detectors based on n-type 4H-SiC epilayers. ECS Transactions, 45(7), 27-33.

http://dx.doi.org/doi:10.1149/1.3701522