Characterization of Semi-Insulating 4H Silicon Carbide for Radiation Detectors

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
Ramesh Madhu Krishna, University of South CarolinaFollow
P. G. Muzykov, University of South Carolina - ColumbiaFollow
Sandip Das, University of South Carolina - ColumbiaFollow
Tangali S. Sudarshan, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Nuclear Science, Electrical Engineering

Publication Info

Published in IEEE Transactions on Nuclear Science, Volume 58, Issue 4, 2011, pages 1992-1999.

© IEEE Transactions on Nuclear Science 2011, Institute of Electrical and Electronics Engineers

Mandal, K. C., Krishna, R. M., Muzykov, P. G., Das, S., & Sudarshan, T. S. (9 June 2011). Characterization of semi-insulating 4H silicon carbide for radiation detectors. IEEE Transactions on Nuclear Science, 58(4), 1992-1999.

http://dx.doi.org/10.1109/TNS.2011.2152857

Rights

© IEEE Transactions on Nuclear Science 2011, Institute of Electrical and Electronics Engineers

Mandal, K. C., Krishna, R. M., Muzykov, P. G., Das, S., & Sudarshan, T. S. (9 June 2011). Characterization of semi-insulating 4H silicon carbide for radiation detectors. IEEE Transactions on Nuclear Science, 58(4), 1992-1999.

http://dx.doi.org/10.1109/TNS.2011.2152857