Characterization of 4H-SiC Epitaxial Layers and High-Resistivity Bulk Crystals for Radiation Detectors
Nuclear Science, Electrical Engineering
Published in IEEE Transactions on Nuclear Science, Volume 59, Issue 4, 2012, pages 1591-1596.
© IEEE Transactions on Nuclear Science 2012, Institute of Electrical and Electronics Engineers
Mandal, K. C., Muzykov, P. G., Krishna, R. M., & Terry, J. R. (August 2012). Characterization of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors. IEEE Transactions on Nuclear Science, 59(4), 1591-1596.