Correlation of Deep Levels With Detector Performance in 4H-SiC Epitaxial Schottky Barrier Alpha Detectors

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
S. K. Chaudhuri
K. V. Nguyen
M. A. Mannan

Document Type

Article

Subject Area(s)

Nuclear Science, Electrical Engineering

Publication Info

Published in IEEE Transactions on Nuclear Science, Volume 61, Issue 4, 2014, pages 2338-2344.

© IEEE Transactions on Nuclear Science 2014, Institute of Electrical and Electronics Engineers

Mandal, K. C., Chaudhuri, S. K., Nguyen, K. V., & Mannan, M. A. (August 2014). Correlation of deep levels with detector performance in 4H-SiC epitaxial Schottky barrier alpha detectors. IEEE Transactions on Nuclear Science, 61(4), 2338-2344.

http://dx.doi.org/10.1109/TNS.2014.2335736

Rights

© IEEE Transactions on Nuclear Science 2014, Institute of Electrical and Electronics Engineers

Mandal, K. C., Chaudhuri, S. K., Nguyen, K. V., & Mannan, M. A. (August 2014). Correlation of deep levels with detector performance in 4H-SiC epitaxial Schottky barrier alpha detectors. IEEE Transactions on Nuclear Science, 61(4), 2338-2344.

http://dx.doi.org/10.1109/TNS.2014.2335736