Effect of Z_1/2, EH₅, and Ci1 Deep Defects on the Performance of n-type 4H-SiC Epitaxial Layers Schottky Detectors: Alpha Spectroscopy and Deep Level Transient Spectroscopy Studies

Author(s)

M. A. Mannan
S. K. Chaudhuri
K. V. Nguyen
K. C. Mandal, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Electrical Engineering, Applied Physics

Publication Info

Published in Journal of Applied Physics, Volume 115, Issue 22, 2014, pages 224504-1-224504-6.

© Journal of Applied Physics 2014, American Institute of Physics

Mannan, M. A., Chaudhuri, S. K., Nguyen, K. V., & Mandal, K. C. (14 June 2014). Effect of Z_⅟₂, EH₅, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies. Journal of Applied Physics, 115(22), #224504.

http://dx.doi.org/10.1063/1.4883317

http://scitation.aip.org/content/aip/journal/jap/115/22/10.1063/1.4883317

Rights

© Journal of Applied Physics 2014, American Institute of Physics

Mannan, M. A., Chaudhuri, S. K., Nguyen, K. V., & Mandal, K. C. (14 June 2014). Effect of Z_⅟₂, EH₅, and Ci1 deep defects on the performance of n-type 4H-SiC epitaxial layers Schottky detectors: Alpha spectroscopy and deep level transient spectroscopy studies. Journal of Applied Physics, 115(22), #224504.

http://dx.doi.org/10.1063/1.4883317

http://scitation.aip.org/content/aip/journal/jap/115/22/10.1063/1.4883317