Engineering, Electrical Engineering
Published in Journal of Applied Physics, Volume 105, Issue 5, 2009, pages 053709-1-053709-4.
© Journal of Applied Physics 2009, American Institute of Physics
Cui, Y., Caudel, D. D., Bhattacharya, P., Burger, A., Mandal, K. C., Johnstone, D., & Payne, S. A. (1 March 2009). Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence. Journal of Applied Physics, 105(5), #053709.