Document Type
Article
Subject Area(s)
Engineering, Electrical Engineering
Publication Info
Published in Journal of Applied Physics, Volume 105, Issue 5, 2009, pages 053709-1-053709-4.
© Journal of Applied Physics 2009, American Institute of Physics
Cui, Y., Caudel, D. D., Bhattacharya, P., Burger, A., Mandal, K. C., Johnstone, D., & Payne, S. A. (1 March 2009). Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence. Journal of Applied Physics, 105(5), #053709.
http://dx.doi.org/10.1063/1.3080157
http://scitation.aip.org/content/aip/journal/jap/105/5/10.1063/1.3080157
Rights
© Journal of Applied Physics 2009, American Institute of Physics
Cui, Y., Caudel, D. D., Bhattacharya, P., Burger, A., Mandal, K. C., Johnstone, D., & Payne, S. A. (1 March 2009). Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence. Journal of Applied Physics, 105(5), #053709.
http://dx.doi.org/10.1063/1.3080157
http://scitation.aip.org/content/aip/journal/jap/105/5/10.1063/1.3080157