Deep Levels in GaTe and GaTe:In Crystals Investigated by Deep-Level Transient Spectroscopy and Photoluminescence

Author(s)

Y. Cui
D. D. Caudel
P. Bhattacharya
A. Burger
K. C. Mandal, University of South Carolina - ColumbiaFollow
D. Johnstone
S. A. Payne

Document Type

Article

Subject Area(s)

Engineering, Electrical Engineering

Publication Info

Published in Journal of Applied Physics, Volume 105, Issue 5, 2009, pages 053709-1-053709-4.

Rights

© Journal of Applied Physics 2009, American Institute of Physics

Cui, Y., Caudel, D. D., Bhattacharya, P., Burger, A., Mandal, K. C., Johnstone, D., & Payne, S. A. (1 March 2009). Deep levels in GaTe and GaTe:In crystals investigated by deep-level transient spectroscopy and photoluminescence. Journal of Applied Physics, 105(5), #053709.

http://dx.doi.org/10.1063/1.3080157

http://scitation.aip.org/content/aip/journal/jap/105/5/10.1063/1.3080157