Acceptor Levels in GaSe:In Crystals Investigated by Deep-Level Transient Spectroscopy and Photoluminescence

Author(s)

Y. Cui
R. Dupere
A. Burger
D. Johnstone
K. C. Mandal, University of South Carolina - ColumbiaFollow
S. A. Payne

Document Type

Article

Subject Area(s)

Engineering, Electrical Engineering

Publication Info

Published in Journal of Applied Physics, Volume 103, Issue 1, 2008, pages 013710-1-013710-4.

Rights

© Journal of Applied Physics 2008, American Institute of Physics

Cui, Y., Dupere, R., Burger, A., Johnstone, D., Mandal, K. C., & Payne, S. A. (1 January 2008). Acceptor levels in GaSe:In crystals investigated by deep-level transient spectroscopy and photoluminescence. Journal of Applied Physics, 103(1), #013710.

http://dx.doi.org/10.1063/1.2831130

http://scitation.aip.org/content/aip/journal/jap/103/1/10.1063/1.2831130