Document Type
Article
Subject Area(s)
Engineering, Electrical Engineering
Publication Info
Published in Applied Physics Letters, Volume 104, Issue 19, 2014, pages 192106-1-192106-4.
© Applied Physics Letters 2014, American Institute of Physics
Das, S., Chaudhuri, S. K., Bhattacharya, R. N., & Mandal, K. C. (12 May 2014). Defect levels in Cu₂ZnSn(SₓSe₁₋ₓ)₄ solar cells probed by current-mode deep level transient spectroscopy. Applied Physics Letters, 104(19), #192106.
http://dx.doi.org/10.1063/1.4876925
http://scitation.aip.org/content/aip/journal/apl/104/19/10.1063/1.4876925
Rights
© Applied Physics Letters 2014, American Institute of Physics
Das, S., Chaudhuri, S. K., Bhattacharya, R. N., & Mandal, K. C. (12 May 2014). Defect levels in Cu₂ZnSn(SₓSe₁₋ₓ)₄ solar cells probed by current-mode deep level transient spectroscopy. Applied Physics Letters, 104(19), #192106.
http://dx.doi.org/10.1063/1.4876925
http://scitation.aip.org/content/aip/journal/apl/104/19/10.1063/1.4876925