Defect Levels in Cu₂ZnSn(SₓSe₁₋ₓ)₄ Solar Cells Probed by Current-Mode Deep Level Transient Spectroscopy

Author(s)

S. Das
S. K. Chaudhuri
R. N. Bhattacharya
K. C. Mandal, University of South Carolina - ColumbiaFollow

Document Type

Article

Subject Area(s)

Engineering, Electrical Engineering

Publication Info

Published in Applied Physics Letters, Volume 104, Issue 19, 2014, pages 192106-1-192106-4.

Rights

© Applied Physics Letters 2014, American Institute of Physics

Das, S., Chaudhuri, S. K., Bhattacharya, R. N., & Mandal, K. C. (12 May 2014). Defect levels in Cu₂ZnSn(SₓSe₁₋ₓ)₄ solar cells probed by current-mode deep level transient spectroscopy. Applied Physics Letters, 104(19), #192106.

http://dx.doi.org/10.1063/1.4876925

http://scitation.aip.org/content/aip/journal/apl/104/19/10.1063/1.4876925