Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters

Author(s)

J.P. Zhang
E. Kuokstis
Q. Fareed
H.M. Wang
J.W. Yang
Grigory Simin, University of South Carolina - ColumbiaFollow
M. Asif Khan
G. Tamulaitis
G. Kurilcik
S. Jursenas
A. Zukauskas
R. Gaska
M. Shur

Document Type

Article

Publication Info

Published in Physica Status Solidi (a), Volume 188, Issue 1, 2001, pages 95-99.

©Physica Status Solidi (a) 2001, Wiley VCH-Verlag.

Zhang, J. P., Kuokstis, E., Fareed, Q., Wang, H. M., Yang, J. W., Simin, G., Khan, M. A., Tamulaitis, G., Kurilcik, G., Jursenas, S., Zukauskas, A., Gaska, R. & Shur, M. (November 2001). Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters. Physica Status Solidi (a), 188 (1), 95-99. 3.0.CO;2-Q%20" >http://dx.doi.org/10.1002/1521-396X(200111)188:13.0.CO;2-Q

Rights

©Physica Status Solidi (a) 2001, Wiley VCH-Verlag.

Zhang, J. P., Kuokstis, E., Fareed, Q., Wang, H. M., Yang, J. W., Simin, G., Khan, M. A., Tamulaitis, G., Kurilcik, G., Jursenas, S., Zukauskas, A., Gaska, R. & Shur, M. (November 2001). Pulsed Atomic Layer Epitaxy of Quaternary AlInGaN Layers for Ultraviolet Light Emitters. Physica Status Solidi (a), 188 (1), 95-99. 3.0.CO;2-Q%20" >http://dx.doi.org/10.1002/1521-396X(200111)188:13.0.CO;2-Q