Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications

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Article

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©IEEE Transactions on Microwave Theory and Techniques 2003, Institute of Electrical and Electronics Engineers (IEEE).

Khan, M. A., Simin, G., Yang, J., Zhang, J., Koudymov, a., Shur, M. S., Gaska, R., Hu, X., & Tarakji, A. (February 2003). Insulating Gate III-N Heterostructure Field-Effect Transistors for High-Power Microwave and Switching Applications. IEEE Transactions on Microwave Theory and Techniques, 51 (2), 624-633. http://dx.doi.org/10.1109/TMTT.2002.807681

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