HfO₂-III-Nitride RF Switch with Capacitively Coupled Contacts

Author(s)

A. Koudymov
N. Pala
V. Tokranov
S. Oktyabrsky
M. Gaevski
R. Jain, University of South Carolina - Columbia
J. Yang
X. Hu
M. Shur
R. Gaska
Grigory Simin, University of South Carolina - ColumbiaFollow

Document Type

Article

Publication Info

Published in IEEE Electron Device Letters, Volume 30, Issue 5, 2009, pages 478-480.

©IEEE Electron Device Letters 2009, Institute of Electrical and Electronics Engineers (IEEE).

 Koudymov, A., Pala, N., Tokranov, V., Oktyabrsky, S., Gaevski, M., Jain, R., Yang, J., Hu, X., Shur, M., Gaska, R., & Simin, G. (7 April 2009). HfO₂-III-Nitride RF Switch with Capacitively Coupled Contacts. IEEE Electron Device Letters, 30 (5), 478 – 480. http://dx.doi.org/10.1109/LED.2009.2017284

Rights

©IEEE Electron Device Letters 2009, Institute of Electrical and Electronics Engineers (IEEE).

 Koudymov, A., Pala, N., Tokranov, V., Oktyabrsky, S., Gaevski, M., Jain, R., Yang, J., Hu, X., Shur, M., Gaska, R., & Simin, G. (7 April 2009). HfO₂-III-Nitride RF Switch with Capacitively Coupled Contacts. IEEE Electron Device Letters, 30 (5), 478 – 480. http://dx.doi.org/10.1109/LED.2009.2017284