Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors

Author(s)

R. Gaska
M. S. Shur
X. Hu
J. W. Yang
A. Tarakji
Grigory Simin, University of South Carolina - ColumbiaFollow
A. Khan
J. Deng
T. Werner
S. Rumyantsev
N. Pala

Document Type

Article

Abstract

We report on the influence of the channel doping on dc, high frequency, and noise performance of GaN metal–semiconductor field-effect transistors (MESFETs) grown on sapphire substrates. The devices with the channel thicknesses from 50 to 70 nm and doping levels up to 1.5×10¹⁸ cm⁻³ were investigated. An increase in the channel doping results in the improved dc characteristics, higher cutoff, and maximum oscillation frequencies, and reduced low frequency and microwave noise. The obtained results demonstrate that the dc and microwave performance characteristics of short-channel GaN MESFETs may be comparable to those for conventional AlGaN/GaN heterostructure FETs.

Publication Info

Published in Applied Physics Letters, Volume 78, Issue 6, 2001, pages 769-771.

Rights

©Applied Physics Letters 2001, American Institute of Physics (AIP).

Gaska, R., Shur, M. S., Hu, X., Yang, J. W., Tarakji, A., Simin, G., Khan, A., Deng, J., Werner, T., Rumyantsev, S., & Pala, N. (5 February 2001). Highly Doped Thin-Channel GaN-Metal-Semiconductor Field-Effect Transistors. Applied Physics Letters, 78 (6), 769-771. http://dx.doi.org/10.1063/1.1344577