SiO₂-Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors

Author(s)

V. AdivarahanFollow
Grigory Simin, University of South Carolina - ColumbiaFollow
J. W. Yang
A. Lunev
M. Asif Khan
M. Pala
M. Shur
R. Gaska

Document Type

Article

Abstract

We report on a transparent Schottky-barrierultraviolet detector on GaN layers over sapphire substrates. Using SiO₂ surface passivation, reverse leakage currents were reduced to a value as low as 1 pA at 5 V reverse bias for 200 μm diameter device. The device exhibits a high internal gain, about 50, at low forward biases. The response time (about 15 ns) is RC limited, even in the internal gain regime. A record low level of the noise spectral density, 5×10⁻²³ A²/Hz, was measured at 10 Hz. We attribute this low noise level to the reduced reverse leakage current.

Publication Info

Published in Applied Physics Letters, Volume 77, Issue 6, 2000, pages 863-865.

Rights

©Applied Physics Letters 2000, American Institute of Physics (AIP).

Adivarahan, V., Simin, G., Yang, J. W., Lunev, A., Khan, M. A., Pala, N., Shur, M., & Gaska, R. (7 August 2000). SiO₂-Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors. Applied Physics Letters, 77 (6), 863-865. http://dx.doi.org/10.1063/1.1306647