Characterization of 4H-SiC Epitaxial Layers and High-Resistivity Bulk Crystals for Radiation Detectors

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
P. G. Muzykov, University of South Carolina - ColumbiaFollow
Ramesh Madhu Krishna, University of South CarolinaFollow
J. R. Terry

Document Type

Article

Subject Area(s)

Nuclear Science, Electrical Engineering

Publication Info

Published in IEEE Transactions on Nuclear Science, Volume 59, Issue 4, 2012, pages 1591-1596.

© IEEE Transactions on Nuclear Science 2012, Institute of Electrical and Electronics Engineers

Mandal, K. C., Muzykov, P. G., Krishna, R. M., & Terry, J. R. (August 2012). Characterization of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors. IEEE Transactions on Nuclear Science, 59(4), 1591-1596.

http://dx.doi.org/10.1109/TNS.2012.2202916

Rights

© IEEE Transactions on Nuclear Science 2012, Institute of Electrical and Electronics Engineers

Mandal, K. C., Muzykov, P. G., Krishna, R. M., & Terry, J. R. (August 2012). Characterization of 4H-SiC epitaxial layers and high resistivity bulk crystals for radiation detectors. IEEE Transactions on Nuclear Science, 59(4), 1591-1596.

http://dx.doi.org/10.1109/TNS.2012.2202916