Fabrication and Characterization of High Barrier Cd_0.9Zn_0.1Te Schottky Diodes for High Resolution Nuclear Radiation Detectors

Author(s)

K. C. Mandal, University of South Carolina - ColumbiaFollow
Ramesh Madhu Krishna, University of South CarolinaFollow
P. G. Muzykov, University of South Carolina - ColumbiaFollow
Timothy C. Hayes, University of South CarolinaFollow

Document Type

Article

Subject Area(s)

Nuclear Science, Electrical Engineering

Publication Info

Published in IEEE Transactions on Nuclear Science, Volume 59, Issue 4, 2012, pages 1504-1509.

© IEEE Transactions on Nuclear Science 2012, Institute of Electrical and Electronics Engineers

Mandal, K. C., Krishna, R. M., Muzykov, P. G., & Hayes, T. C. (August 2012). Fabrication and characterization of high barrier Cd_0.9Zn_0.1Te Schottky diodes for high resolution nuclear radiation detectors. IEEE Transactions on Nuclear Science, 59(4), 1504-1509.

http://dx.doi.org/10.1109/TNS.2012.2202324

Rights

© IEEE Transactions on Nuclear Science 2012, Institute of Electrical and Electronics Engineers

Mandal, K. C., Krishna, R. M., Muzykov, P. G., & Hayes, T. C. (August 2012). Fabrication and characterization of high barrier Cd_0.9Zn_0.1Te Schottky diodes for high resolution nuclear radiation detectors. IEEE Transactions on Nuclear Science, 59(4), 1504-1509.

http://dx.doi.org/10.1109/TNS.2012.2202324