Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes
Document Type
Article
Publication Info
Published in Japanese Journal of Applied Physics, Volume 40, Issue 2-#9A/B, 2001, pages L921-L924.
Rights
©Japanese Journal of Applied Physics 2001, Japanese Society of Applied Physics.
Zhang, J. P., Adivarahan, V., Wang, H. M., Fareed, Q., Kuokstis, E., Chitnis, A., Shatalov, M., Yang, J. W., Simin, G., Khan, M. A., Shur, M. & Gaska, R. (September 2001). Quaternary AlInGaN Multiple Quantum Wells for Ultraviolet Light Emitting Diodes. Japanese Journal of Applied Physics, 40 (2-#9A/B), L921-L924. http://dx.doi.org/10.1143/JJAP.40.L921
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